Publicaciones

• Article dans une revue

Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions

B. Hackens, L. Gence, S. Faniel, C. Gustin, X. Wallart, S. Bollaert, A. Cappy, V. Bayot

Physica E: Low-dimensional Systems and Nanostructures, 2006, 34, pp.515-518. ⟨hal-00154922⟩

• Article dans une revue

Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shchepetov, Yannick Roelens, S. Bollaert, A. Cappy, S. Rumyantsev

Applied Physics Letters, 2006, 89, pp.131926-1-3. ⟨hal-00154920⟩

• Article dans une revue

High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

Matthieu Werquin, Damien Ducatteau, Nicolas Vellas, E. Delos, Yvon Cordier, Raphaël Aubry, Christophe Gaquière

DC- and RF-pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the potential of...

Microwave and Optical Technology Letters, 2006, 48, pp.2303-2305. ⟨10.1002/mop.21897⟩. ⟨hal-00154928⟩

• Article dans une revue

High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 mu m

Patrick Mounaix, Marc Tondusson, Nicolas Chimot, Juliette Mangeney, Karine Blary, Jean-Francois Lampin

The performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate material down to 1.4 ps without the requirement of an epitaxial layer growth....

Electronics Letters, 2006, 42 (15), pp.879-880. ⟨10.1049/el:20061529⟩. ⟨hal-01552875⟩

• Article dans une revue

Diamond detectors for LYRA, the solar VUV radiometer on board PROBA2

A. Benmoussa, Jean-François Hochedez, U. Schühle, W. Schmutz, K. Haenen, Y. Stockman, A. Soltani, F. Scholze, U. Kroth, V. Mortet, A. Theissen, C. Laubis, M. Richter, S. Kollerc, J.M. Defise, S. Koizumi

New pin-photodiode and metal–semiconductor–metal (MSM) photoconductor devices based on diamond material have been produced showing high responsivity around 200 nm. LYRA, the Large Yield RAdiometer, will use such detectors for the first time for a solar physics space instrument. A set of measurement...

Diamond and Related Materials, 2006, 15 (4-8), pp.802-806. ⟨10.1016/j.diamond.2005.10.024⟩. ⟨hal-00127947⟩

• Communication dans un congrès

High crosstalk InP digital optical switch for microwave application

Malek Zegaoui, Joseph Harari, D. Lauvernier, Didier Decoster, Jean Chazelas

Because electro-optic switches are key elements for the synthesis of large bandwidth, high dynamic, true time delay optically controlled microwave antennas, we designed, fabricated and characterized a new digital optical switch grown on InP substrate, and based on carrier-induced effects. The...

Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components/Architectures for Microwave Systems and Displays, Sep 2006, Stockholm, Sweden. pp.63990M-1-4. ⟨hal-00147744⟩

• Communication dans un congrès

Optimal bit rate adaptation for layered video transmission over spectrally shaped channels using multicarrier modulation

C. Goudemand, François-Xavier Coudoux, Marc G. Gazalet

2006, pp.13-16. ⟨hal-00147739⟩

• Article dans une revue

Terahertz detection by GaN/AlGaN transistors

A. El Fatimy, S.B. Tombet, F. Teppe, W. Knap, D.B. Veksler, S. Rumyantsev, M.S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, Christophe Gaquière, A. Cappy, D. Theron

Electronics Letters, 2006, 42, pp.1342-1344. ⟨hal-00147740⟩

• Communication dans un congrès

Study of field plate AlGaN/GaN HEMTs by means of a 2D-hydrodynamic model for power applications

Brahim Benbakhti, Michel Rousseau, Jean-Claude de Jaeger

Field plate AlGaN/GaN HEMT (high electron mobility transistor) structures, are very promising to improve the microwave power performance. This device permits to improve the breakdown voltage but the field plate (FP) electrode involves an increase of the parasitic capacitances and consequently a...

European Microwave Integrated Circuits Conference, Sep 2006, Manchester, United Kingdom. 4 pp., ⟨10.1109/EMICC.2006.282657⟩. ⟨hal-00152973⟩

• Communication dans un congrès

Periodic transmission lines for terahertz BioMEMS

Tahsin Akalin, Thomas Dargent

SPIE PHOTONICS EUROPE, Apr 2006, Strasbourg, France. pp.61822L-1-9. ⟨hal-00152960⟩