Publicaciones

• COMM

Etude de structures du type couche sur substrat par laser ultrasons

M. Lemaire, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Journées Ultrasons Laser, 2006, Le Mans, France. ⟨hal-00147743⟩

• COMM

Nanopatterning of InP(001) surface using e-beam lithography to localize InAs quantum dots for single photon source application

A. Turala, P. Rojo-Romeo, P. Regreny, M. Gendry, C. Priester

2006, 2 pp. ⟨hal-00152961⟩

• COMM

Design of wide-band branch-line coupler in the G-frequency band

Gaëtan Prigent, Eric Rius, Karine Blary, Henri Happy, Sylvie Lepilliet

This paper deals with the design of broadband hybrid coupler in thin film microstrip (TFMS) technology for millimeter-wave applications in the G-band frequency range. The couplers to be designed are realized in BCB-based technology. The technological process as well as transmission lines...

IEEE MTT-S International Microwave Symposium Digest, Jun 2006, San Francisco, CA, United States. pp.WE4F-5, ⟨10.1109/MWSYM.2006.249905⟩. ⟨hal-00126799⟩

• ART

Investigation of the Optical Properties of epitaxial-lateral-overgrown GaN on R- and M- plane Sapphire

Tobias Guhne, Zahia Bougrioua, Martin Albrecht, Phillippe Vennéguès, Mathieu Leroux, Marguerite Laügt, Sosse Ndiaye, Monique Teisseire, Luan Nguyen, Pierre Gibart

Optical properties of GaN templates grown by the Epitaxial Lateral Overgrowth (ELO) technique along the nonpolar (1120) and the semipolar (1122) directions on R- and M-sapphire were investigated. Spatially resolved Cathodoluminescence (CL) was carried out in order to identify defect related...

MRS Online Proceedings Library, 2006, 955, ⟨10.1557/PROC-0955-I12-04⟩. ⟨hal-02906702⟩

• THESE

Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences millimétriques, 130 nm SOI CMOS technology for microwaves applications

Christophe Pavageau

La technologie CMOS SOI (« Silicon On Insulator ») a déjà montré son intérêt pour les circuits numériques par rapport à la technologie CMOS sur substrat massif (« bulk »). Avec l'entrée des technologies CMOS dans l'ère des dimensions nanométriques, les transistors atteignent des..., Silicon On Insulator (SOI) CMOS technology has already shown good performances for digital applications compared to bulk CMOS technology. At nanometer-scale, SOI CMOS transistors exhibit very high cut-off frequencies, enabling the design of millimeter-wave integrated circuits and therefore the...

Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2005. Français. ⟨NNT : ⟩. ⟨tel-00011744v2⟩

• PATENT

Dispositif de manipulation de gouttes destiné à l'analyse biochimique, procédé de fabrication du dispositif, et système d'analyse microfluidique

J.C. Fourrier, F. Caron, P. Tabourier, C. Druon

N° de brevet: FR2871150 (A1). 2005. ⟨hal-00372422⟩

• PATENT

Dispositif pour désorption par rayonnement laser incorporant une manipulation de l'échantillon liquide sous forme de gouttes individuelles permettant leur traitement chimique et biochimique

J.C. Fourrier, F. Caron, J.P. Lepesant, D. Loyaux, C. Rolando, P. Tabourier, C. Druon

N° de brevet: FR2871076 (A1). 2005. ⟨hal-00372424⟩

• COMM

About the role played by the principles in the physics and mathematics by J.H. Poincaré

Raffaele Pisano

AIF Workshop Science & Teaching, 6th Dec., AIF Latina & GB Grassi Latina, Dec 2005, Latina, Italy. ⟨hal-04518908⟩

• ART

Planar excitation of Goubau transmission lines for THz BioMEMS

A. Treizebre, Tahsin Akalin, Bertrand Bocquet

We propose and demonstrate an original planar excitation of a single wire transmission line also known as Goubau-Line (G-Line). The excitation is based on an electromagnetic transition between a coplanar waveguide and the desired G-line in a planar configuration. We present some characteristics for...

IEEE Microwave and Wireless Components Letters, 2005, 15 (12), pp.886-888. ⟨10.1109/LMWC.2005.859976⟩. ⟨hal-00147496⟩

• ART

Optimisation of the parameters of an extended defect model applied to non-amorphizing implants

E. Lampin, Fuccio Cristiano, Youness Lamrani, Damien Connétable

In this paper, we present the optimisation of the parameters of a physical model of the kinetics of extended defects and applied the model with the optimised parameters to non-amorphizing implants. The model describes the small clusters, the {113} defects and the dislocation loops. In the first...

Materials Science and Engineering: B, 2005, 124-125, pp.397-400. ⟨10.1016/j.mseb.2005.08.032⟩. ⟨hal-03599806⟩