Publicaciones

• ART

130-nm partially depleted SOI MOSFET nonlinear model including the kink effect for linearity properties investigation

A. Siligaris, Gilles Dambrine, D. Schreurs, Francois Danneville

In this brief, a nonlinear empirical model is proposed for partially depleted (PD) silicon-on-insulator (SOI) MOSFETs. It is based on an equivalent circuit approach in which the nonlinear elements are described by empirical equations. A new original method is proposed for modeling the kink effect...

IEEE Transactions on Electron Devices, 2005, 52 (12), pp.2809-2812. ⟨10.1109/TED.2005.859707⟩. ⟨hal-00125134⟩

• ART

Impact of large angle tilt implantation on the threshold voltages of LDMOS transistors on SOI

H. Xu, E. Lampin, Emmanuel Dubois, S. Bardy, F. Murray

A purely vertical (0°) implantation and a large-angle tilt implantation (LATID) (usually 45°) are used to form the short channel of an LDMOS transistor. A modelling of both implantations is first carried on taking into account the geometrical effects of the LATID as well as the strong channelling...

Materials Science and Engineering: B, 2005, 124-125, pp.323-326. ⟨10.1016/j.mseb.2005.08.036⟩. ⟨hal-00138396⟩

• ART

Frequency-dependent spontaneous emission rate from CdSe and CdTe nanocrystals : influence of dark states

A.F. van Driel, Guy Allan, Christophe Delerue, Peter Lodahl, Willem L. Vos, Daniel Vanmaekelbergh

We studied the rate of spontaneous emission from colloidal CdSe and CdTe nanocrystals at room temperature. The decay rate, obtained from luminescence decay curves, increases with the emission frequency in a supralinear way. This dependence is explained by the thermal occupation of dark exciton...

Physical Review Letters, 2005, 95, pp.236804/1-4. ⟨10.1103/PhysRevLett.95.236804⟩. ⟨hal-00126425⟩

• ART

Unusual quantum confinement effects in IV-VI materials

Guy Allan, Christophe Delerue

The effect of quantum confinement in PbSe quantum wells and dots is studied using tight binding calculations. Compared to zinc-blende semiconductors, unusual physical properties are predicted for rock salt PbSe nanostructures. The energy gap increases as the inverse of the size both for wells and...

Materials Science and Engineering: C, 2005, 25 (5-8), pp.687-690. ⟨10.1016/j.msec.2005.06.026⟩. ⟨hal-00126432⟩

• COUV

Métamatériaux : des micro-ondes à l'optique

O. Vanbesien

Techniques de l'Ingénieur, TI Sciences et Techniques, Paris, France, pp.RE-45, 2005. ⟨hal-00132090⟩

• ART

Propagation of electromagnetic waves in periodic and Fibonacci photonic loop structures

H. Aynaou, E.H. El Boudouti, Y. El Hassouani, Abdellatif Akjouj, B. Djafari-Rouhani, J. Vasseur, Leonard Dobrzynski, V.R. Velasco

Physica A: Statistical Mechanics and its Applications, 2005, 358 (1), pp.68-85. ⟨10.1016/j.physa.2005.06.007⟩. ⟨hal-04070935⟩

• ART

Propagation of electromagnetic waves in periodic and Fibonacci photonic loop structures

Jerome O. Vasseur, H. Aynaou, E.H. El Boudouti, Y. El Hassouani, Abdellatif Akjouj, Bahram Djafari-Rouhani, J. Vasseur, L. Dobrzynski, V.R. Velasco

Physica A: Statistical Mechanics and its Applications, 2005, 358 (1), pp.68-85. ⟨10.1016/j.physa.2005.06.007⟩. ⟨hal-03302387⟩

• COMM

Determination of the d31 piezoelectric coefficient of PZT thin film using dedicated microelectromechanical systems

Cédric Ayela, Eric Cattan, Caroline Soyer, Christian Bergaud, Martine Pugnière, Liviu Nicu

MRS fall meeting, Nov 2005, Boston, United States. ⟨hal-00399522⟩

• HDR

Contribution à l'étude de l'épitaxie d'hétérostructures à base de semi-conducteurs III-V phosphorés, Study of the epitaxial growth of III-V phosphorus-based semiconductor heterostructures

Xavier Wallart

La fabrication d'hétérostructures de semi-conducteurs III-V de qualité repose sur la connaissance des surfaces, l'optimisation de la formation des interfaces et la maîtrise de la relaxation des couches contraintes. Nous montrons d'abord par une étude en diffraction et spectroscopie d...

• COMM

Étude du pouvoir thermoélectrique de couches de polysilicium dopées N et P de 20 à 450 °C

Malika Aithammouda, Katir Ziouche, Mehdi Haffar, Pascale Godts, Didier Leclercq

L'objectif de cette étude est de mettre au point des microthermocouples en polysilicium dopé dont le pouvoir thermoélectrique est pratiquement indépendant de la température de 20 à 450 °C. Cette caractéristique est indispensable pour réaliser des microcapteurs de flux thermique de sensibilité...

MajecSTIC 2005 : Manifestation des Jeunes Chercheurs francophones dans les domaines des STIC, IRISA – IETR – LTSI, Nov 2005, Rennes, pp.368-372. ⟨inria-00000730⟩