Publicaciones

• Communication dans un congrès

Fabrication and characterization of high index contrast optical nanowires in III-V semiconductor/benzocyclobutene

Michel Carette, D. Lauvernier, Malek Zegaoui, Jean Chazelas, Jean-Pierre Vilcot, D. Bernard, Didier Decoster

We expose the technological process to realize III-V semiconductor optical nanowires embedded in a Benzocyclobutene (BCB) matrix based on adhesive wafer bonding. We also point out some properties of those nanophotonic waveguides to develop all optical switches.

European Conference on Optical Communication (ECOC), Jul 2006, Cannes, France. pp.217-218, ⟨10.1109/ECOC.2006.4801241⟩. ⟨hal-00138751⟩

• Article dans une revue

Mechanical properties determined by nano indentation tests of Pb(Zr,Ti)O3 and Pb(Mg1/3 Nb2/3)1-x TixO3) sputtered thin films

P. Delobelle, E. Fribourg-Blanc, Denis Remiens

Thin Solid Films, 2006, 515, pp.1385-1393. ⟨hal-00138710⟩

• Communication dans un congrès

Design of low frequency acoustic sensor for wheat dough study in kneading and fermentation phases

Georges Nassar, A. Skaf, Fabrice Lefebvre, Bertrand Nongaillard, R. Dib

2006, pp.1153-1163. ⟨hal-00138738⟩

• Article dans une revue

Effect of a Se monolayer on interface properties between Al2O3 and n-type Si(100)

G. Larrieu, M. Tao, N. Moumen, E. Moldonado, W.P. Kirk, G. Song, W. Bai, D.L. Kwong

Transactions of the Electrochemical Society, 2006, 1, pp.371. ⟨hal-00138658⟩

• Article dans une revue

A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

R. Rengel, M.J. Martin, T. Gonzalez, J. Mateos, D. Pardo, Gilles Dambrine, J.P. Raskin, Francois Danneville

IEEE Transactions on Electron Devices, 2006, 53, pp.523-532. ⟨hal-00126521⟩

• Communication dans un congrès

Integration of ultra wide band high pass filter using high performance inductors in advanced high resistivity SOI CMOS technology

F. Gianesello, D. Gloria, C. Raynaud, C. Tinella, P. Vincent, F. Saguin, S. Boret, C. Clement, B. van Haaren, J.M. Fournier, Gilles Dambrine, P. Benech

2006, pp.248-251. ⟨hal-00126802⟩

• Article dans une revue

High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 mu m

Patrick Mounaix, Marc Tondusson, Nicolas Chimot, Juliette Mangeney, Karine Blary, Jean-Francois Lampin

The performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate material down to 1.4 ps without the requirement of an epitaxial layer growth....

Electronics Letters, 2006, 42 (15), pp.879-880. ⟨10.1049/el:20061529⟩. ⟨hal-01552875⟩

• Article dans une revue

Diamond detectors for LYRA, the solar VUV radiometer on board PROBA2

A. Benmoussa, Jean-François Hochedez, U. Schühle, W. Schmutz, K. Haenen, Y. Stockman, A. Soltani, F. Scholze, U. Kroth, V. Mortet, A. Theissen, C. Laubis, M. Richter, S. Kollerc, J.M. Defise, S. Koizumi

New pin-photodiode and metal–semiconductor–metal (MSM) photoconductor devices based on diamond material have been produced showing high responsivity around 200 nm. LYRA, the Large Yield RAdiometer, will use such detectors for the first time for a solar physics space instrument. A set of measurement...

Diamond and Related Materials, 2006, 15 (4-8), pp.802-806. ⟨10.1016/j.diamond.2005.10.024⟩. ⟨hal-00127947⟩

• Communication dans un congrès

Raman spectroscopy characterization of single Si-nanowires

M. Marczak, C. Jastrzebski, W. Gebricki, M. Zdrojek, Thierry Melin, D. Hourlier

6th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2006, 2006, Cranfield, United Kingdom. ⟨hal-00243977⟩

• Communication dans un congrès

Sub-picosecond time-domain measurement of heterojunction bipolar transistors and photodiodes

Alexandre Beck, Jean-Francois Lampin, Mohammed Zaknoune, L. Desplanque, Francis Mollot

We demonstrate the time-domain measurement of the dynamic response of heterojunction bipolar transistors (HBT) and uni-travelling carrier photodiodes (UTC-PD) with sub-picosecond resolution. For the HBT, the stimulus is a step applied to the base. For the UTC-PD, we use optical excitation with 150...

Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, Sep 2006, Shanghai, China. pp.510, ⟨10.1109/ICIMW.2006.368718⟩. ⟨hal-00243970⟩