Publicaciones

• Article dans une revue

Averaging and oversampling correlator receiver with input quantization

Jean-Michel Rouvaen, B. El Khaldi, Atika Rivenq, Yassin El Hillali

Digital Signal Processing, 2006, 16, pp.120-136. ⟨hal-00128166⟩

• Communication dans un congrès

Analyse physique de transistors HEMTs AlGaN/GaN élaborés avec la technologie field plate

Brahim Benbakhti, Michel Rousseau, J-C Gerbedoen, Jean-Claude de Jaeger

10èmes Journées de la Matière Condensée, Aug 2006, Toulouse, France. ⟨hal-00128165⟩

• Communication dans un congrès

Iridium silicide : a promising electrode for metallic source/drain in decananometer MOSFETs

G. Larrieu, Emmanuel Dubois, X. Wallart, J. Katcki

2006, pp.123. ⟨hal-00138682⟩

• Communication dans un congrès

Integration of ultra wide band high pass filter using high performance inductors in advanced high resistivity SOI CMOS technology

F. Gianesello, D. Gloria, C. Raynaud, C. Tinella, P. Vincent, F. Saguin, S. Boret, C. Clement, B. van Haaren, J.M. Fournier, Gilles Dambrine, P. Benech

2006, pp.248-251. ⟨hal-00126802⟩

• Communication dans un congrès

Spectroscopie électronique de boîtes quantiques et de nanocristaux semi-conducteurs

B. Grandidier

GDR Physique Quantique Mésoscopique, 2006, La Grande Motte, France. ⟨hal-00127918⟩

• Communication dans un congrès

High resolution seismic investigation in salt mining context. Comparison of seismic sections

Bogdan Piwakowski, L. Driad-Lebeau, A. Kosecki

Proceedings of the 2007 Near-Surface International Symposium of European Association of Exploration Geophysicists, 2006, Helsinki, Finland. ⟨hal-00201151⟩

• Article dans une revue

Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer ingaas transistors

F. Teppe, M. Orlov, A.E. Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Yannick Roelens, S. Bollaert

Applied Physics Letters, 2006, 89 (22), pp.222109.1-222109.3. ⟨10.1063/1.2392999⟩. ⟨hal-00329604⟩

• Article dans une revue

Stability and pull-in voltage of electrostatic parallel-plate actuators in liquid solutions

Anne-Sophie Rollier, Bernard Legrand, Dominique Collard, Lionel Buchaillot

This paper deals with parallel-plate electrostatic actuators in liquids. We study the stability conditions of such actuators and show that the pull-in effect can be shifted beyond one-third of the gap, and can even be suppressed. We demonstrate that the insulating layers of the actuator plates,...

Journal of Micromechanics and Microengineering, 2006, 16, pp.794-801. ⟨10.1088/0960-1317/16/4/016⟩. ⟨hal-00128663⟩

• Article dans une revue

Diamond detectors for LYRA, the solar VUV radiometer on board PROBA2

A. Benmoussa, Jean-François Hochedez, U. Schühle, W. Schmutz, K. Haenen, Y. Stockman, A. Soltani, F. Scholze, U. Kroth, V. Mortet, A. Theissen, C. Laubis, M. Richter, S. Kollerc, J.M. Defise, S. Koizumi

New pin-photodiode and metal–semiconductor–metal (MSM) photoconductor devices based on diamond material have been produced showing high responsivity around 200 nm. LYRA, the Large Yield RAdiometer, will use such detectors for the first time for a solar physics space instrument. A set of measurement...

Diamond and Related Materials, 2006, 15 (4-8), pp.802-806. ⟨10.1016/j.diamond.2005.10.024⟩. ⟨hal-00127947⟩

• Thèse

Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences millimétriques, 130 nm SOI CMOS technology for microwaves applications

Christophe Pavageau

La technologie CMOS SOI (« Silicon On Insulator ») a déjà montré son intérêt pour les circuits numériques par rapport à la technologie CMOS sur substrat massif (« bulk »). Avec l'entrée des technologies CMOS dans l'ère des dimensions nanométriques, les transistors atteignent des..., Silicon On Insulator (SOI) CMOS technology has already shown good performances for digital applications compared to bulk CMOS technology. At nanometer-scale, SOI CMOS transistors exhibit very high cut-off frequencies, enabling the design of millimeter-wave integrated circuits and therefore the...

Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2005. Français. ⟨NNT : ⟩. ⟨tel-00011744v2⟩