Publicaciones

• Communication dans un congrès

Fabrication and analysis of CMOS fully-compatible high conductance impact-ionization MOS (I-MOS) transistors

C. Charbuillet, Emmanuel Dubois, S. Monfray, P. Bouillon, T. Skotnicki

2006, pp.299-302. ⟨hal-00138680⟩

• Communication dans un congrès

Inhomogeneous spin reorientation transition (SRT) in giant magnetostrictive TbCo2/FeCo multilayers

A. Klimov, Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod

Journée Nanoélectronique du Club EEA, 2006, Lille, France. ⟨hal-00138613⟩

• Autre publication scientifique

Conception, réalisation de micro-capteurs de force à base de jauges piézorésistives pour la caractérisation mécanique d'assemblages cellulaires en milieu liquide

Jean-Baptiste Bureau

2006. ⟨hal-00138944⟩

• Autre publication scientifique

Étude des propriétés électroniques de nanotubes de carbone par microscopie à force électrostatique et spectroscopie Raman

M. Zdrojek

2006. ⟨hal-00138945⟩

• Communication dans un congrès

Self-assembling carbon nanotubes for electronics

J.P. Bourgoin, S. Auvray, J. Borghetti, Vincent Derycke, M.F. Goffman, P. Chenevier, L. Goux-Capes, A. Filoramo, R. Lefevre, S. Straif, K. Nguyen, S. Lyonnais, Et Al., D. Vuillaume

Trends in Nanotechnology Conference, TNT2006, 2006, Grenoble, France. ⟨hal-00138912⟩

• Communication dans un congrès

Ultra wide band dielectric spectroscopy of single cell in microfluidic devices

Vincent Senez, A. Treizebre, Erwan Lennon, Hind Ghandour, Vianney Mille, Thomas Heim, Tahsin Akalin, Takahisa Yamamoto, Nour Eddine Bourzgui, Dominique Legrand, Yasuyuki Sakai, Philippe Supiot, Joël Mazurier, Teruo Fujii, Bertrand Bocquet

10th International Conference on Miniaturized Systems for Chemistry and Life Sciences (uTAS2006), Nov 2006, Tokyo, Japan. pp.738-740. ⟨hal-00130877⟩

• Article dans une revue

TEM characterisation of the erbium silicide formation process using a Pt/Er stack on the silicon-on-insulator substrate

A. Łaszcz, J. Katcki, J. Ratajczak, Xing Tang, Emmanuel Dubois

Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (...

Journal of Microscopy, 2006, 224 (1), pp.38-41. ⟨10.1111/j.1365-2818.2006.01653.x⟩. ⟨hal-00138660⟩

• Article dans une revue

Mechanical properties measured by nanoindentation of Pb(Zr Ti)03 sol-gel films deposited on Pt and LaNi03 electrodes

Patrick Delobelle, G.S. Wang, E. Fribourg-Blanc, Denis Remiens

Surface and Coatings Technology, 2006, 201, pp. 3155-3162. ⟨hal-00159447⟩

• Communication dans un congrès

Ultrasonics assessment of draining kinetic and adhesion phenomenon during cheese manufacture

Georges Nassar, M.N. Sabra, Fabrice Lefebvre, Malika Toubal, Bertrand Nongaillard, Y. Noel

2006, pp.327-328. ⟨hal-00138736⟩

• Communication dans un congrès

Boron migration length in silicon : molecular dynamics versus experiments

V. Cuny, E. Lampin, Christophe Krzeminski, F. Cleri

Materials Research Society Spring Meeting, MRS Spring 2006, Sub-Second Rapid Thermal Processing for Device Fabrication, 2006, Moscone West, San-Franscico, CA, United States. ⟨hal-00138696⟩