Publicaciones

• Article dans une revue

Model for ferroelectric semiconductors thin films accounting for the space varying permittivity

Laurent Baudry, Jérôme Tournier

Reducing thickness of ferroelectric films typically comes with an apparent degradation of their ferroelectric and dielectric properties. The existence of low-dielectric interfacial layers is often invoked to explain such behaviors. Much work has been done on modeling ferroelectric thin films by...

Journal of Applied Physics, 2005, 97, pp.024104. ⟨10.1063/1.1834728⟩. ⟨hal-00125348⟩

• Article dans une revue

Interferometric detection of acoustic waves at air-solid interface – Applications to non-destructive testing

Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Journal of Applied Physics, 2005, 97, pp.094905-1-8. ⟨hal-00140391⟩

• Article dans une revue

Voltage tunable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor

J. Lusakowski, W. Knap, N. Dyakonova, L. Varani, J. Mateos, T. Gonzales, Yannick Roelens, S. Bollaert, A. Cappy, K. Karpierz

Journal of Applied Physics, 2005, 97, pp.64307-1-7. ⟨hal-00125162⟩

• Article dans une revue

Biaxial initial stress characterization of bilayer gold RF-switches

K. Yacine, F. Flourens, David Bourrier, Ludovic Salvagnac, P. Calmont, X. Lafontan, Q.H. Duong, L. Buchaillot, D. Peyrou, Patrick Pons, Robert Plana

Microelectronics Reliability, 2005, 45, pp.1776-1781. ⟨10.1016/j.microrel.2005.07.093⟩. ⟨hal-00128652⟩

• Article dans une revue

Temporal analysis of tissue displacement induced by a transient ultrasound radiation force

S. Callé, J.P. Remenieras, Olivier Bou Matar, M.E. Hachemi, F. Patat

Journal of the Acoustical Society of America, 2005, 118, pp.2829-2840. ⟨10.1121/1.2062527⟩. ⟨hal-00247435⟩

• Article dans une revue

Reactive ion etching of a 20 nanometers tungsten gate using a SF$_6$/N$_2$ chemistry and hydrogen silsesquioxane hard mask resist

G. Larrieu, Emmanuel Dubois

This article reports on a direct method for patterning a tungsten gate in the decananometric range using high-resolution electron-beam lithography and reactive ion etching (RIE). Electron-beam lithography is based on the use of hydrogen silsesquioxane for its remarkable properties as a negative-...

Journal of Vacuum Science and Technology, 2005, 23 (5), pp.2046-2050. ⟨10.1116/1.2050654⟩. ⟨hal-00125635⟩

• Article dans une revue

Three-dimensionnal calculation of propagation losses in photonic crystal waveguides

S. Fasquel, Xavier Mélique, Olivier Vanbésien, D. Lippens

Optics Communications, 2005, 246 (1-3), pp.91-96. ⟨hal-00401300⟩

• Article dans une revue

Subcarrier radio signal transmission over multimode fibre for 60 GHz WLAN using a phase noise cancellation technique

Christophe Loyez, C. Lethien, K. Redha, Jean-Pierre Vilcot, Didier Decoster, N. Rolland, P. Rolland

Electronics Letters, 2005, 41, pp.91-92. ⟨hal-00125330⟩

• Communication dans un congrès

THz devices and applications : a survey of recent researchs

Laurent Chusseau, Jean-Francois Lampin, S. Bollaert, L. Duvillaret, J. Mangeney

13th European Gallium Arsenide and other Compound Semiconductors Application Symposium, GAAS, 2005, Paris, France. ⟨hal-00125317⟩

• Communication dans un congrès

InP based ballistic nanodevices

A. Cappy, J.S. Galloo, S. Bollaert, Yannick Roelens, J. Mateos, T. Gonzales, W. Knap

International Conference on Indium Phosphide and Related Materials, IPRM 2005, 2005, Glasgow, Scotland, United Kingdom. ⟨hal-00125316⟩