Publicaciones

• Communication dans un congrès

Numerical modelling of a buried directional seismic source

Madjid Berraki, Axelle Baroni, Bertrand Dubus

This study investigates the feasibility of a buried directional seismic source for purpose of monitoring or foothills imaging. A numerical model is presented, which aims at determine the elastic wave field radiated by a theoretical directional source embedded in a layered half space.

Proceedings of the 74th Meeting of the Society of Exploration Geophysics, Oct 2004, Denver, CO, United States. ⟨hal-00131110⟩

• Article dans une revue

Air-bridge interconnection and bondpad process for non-planar compound semiconductor devices

G. Ulliac, S. Garidel, Jean-Pierre Vilcot, P. Tilmant

Microelectronic Engineering, 2005, 81, pp.53-58. ⟨hal-00125664⟩

• Article dans une revue

Piezoelectric micro-transformer based on SOI structure

Dejan Vasic, Emmanuel Sarraute, François Costa, Patrick Sangouard, Eric Cattan

Sensors and Actuators A: Physical , 2005, 117 (2), pp.317-324. ⟨hal-00920231⟩

• N°spécial de revue/special issue

Quanti sono i principi della termodinamica ? (How many principles thermodynamics has?)

Raffaele Pisano

La fisica nella scuola , XL (3), pp.203-211, 2005, Proceedings of XLIII AIF National Congress. ⟨hal-04515042⟩

• Communication dans un congrès

Terahertz emission from nanometric HEMTs analyzed by noise spectra

J.F. Millithaler, L. Varani, C. Palermo, J. Mateos, T. Gonzalez, S. Perez, D. Pardo, W. Knap, J. Lusakowski, N. Dyakonova, S. Bollaert, A. Cappy

Terahertz emission from nanometric HEMTs analyzed by noise spectra, 2005, Salamanca, Spain. pp.335-338, ⟨10.1063/1.2036763⟩. ⟨hal-00154896⟩

• Article dans une revue

High performances of InP channel power HEMT at 94 GHz

F Medjdoub, M. Zaknoune, X. Wallart, Christophe Gaquière, D. Theron

Electronics Letters, 2005, 41, pp.1406-1408. ⟨hal-00154912⟩

• Article dans une revue

Resonant Raman scatterring study of Ar⁺ ion-implanted AlGaN

B. Boudart, Y. Guhel, J.C. Pesant, P. Dhamelincourt, M.A. Poisson

160 keV Ar+ ions were homogeneously implanted in AlGaN at room temperature for device isolation purposes. Resonance Raman spectroscopy and DC electrical measurements were used to monitor the structural and electrical changes of the non-annealed and annealed implanted AlGaN samples with a dose...

• Article dans une revue

High mobility InGaAs/InAlAs pseudomorphic heterostructures on InP(001)

X. Wallart, B. Pinsard, F. Mollot

Journal of Applied Physics, 2005, 97, pp.053706-1-6. ⟨hal-00125384⟩

• Article dans une revue

Interferometric detection of acoustic waves at air-solid interface – Applications to non-destructive testing

Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Journal of Applied Physics, 2005, 97, pp.094905-1-8. ⟨hal-00140391⟩

• Article dans une revue

Model for ferroelectric semiconductors thin films accounting for the space varying permittivity

Laurent Baudry, Jérôme Tournier

Reducing thickness of ferroelectric films typically comes with an apparent degradation of their ferroelectric and dielectric properties. The existence of low-dielectric interfacial layers is often invoked to explain such behaviors. Much work has been done on modeling ferroelectric thin films by...

Journal of Applied Physics, 2005, 97, pp.024104. ⟨10.1063/1.1834728⟩. ⟨hal-00125348⟩