Publicaciones
Affichage de 13291 à 13300 sur 16090
Tensile stress determination in silicon nitride membrane by AFM characterization
A.S. Rollier, Bernard Legrand, D. Deresmes, M. Lagouge, D. Collard, L. Buchaillot
2005, pp.828-831. ⟨hal-00125660⟩
Fabrication and characterization of 1.1 GHz blade nanoelectromechanical resonator
Vincent Agache, Bernard Legrand, Dominique Collard, Lionel Buchaillot, Hiroyuki Fujita
Applied Physics Letters, 2005, 86, pp.213104-1-3. ⟨10.1063/1.1929873⟩. ⟨hal-00125633⟩
Actionneurs électrostatiques complètement isolés : fabrication, fonctionnement et caractérisation en milieu liquide
Anne-Sophie Rollier, Bernard Legrand, Lionel Buchaillot, Dominique Collard
17e Congrès Français de Mécanique, 2005, Troyes, France. ⟨hal-04203498⟩
Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors
N. Dyakonova, J. Lusakowski, W. Knap, M. Levinshtein, M. S. Shur, S. Bollaert, A. Cappy
Journal of Applied Physics, 2005, 97, pp.114313-1-5. ⟨hal-00125161⟩
Propagation of Lamb waves in a plate with a periodic grating : interpretation by phonon
D. Leduc, Anne-Christine Hladky, B. Morvan, L. Izbicki, P. Pareige
Journal of the Acoustical Society of America, 2005, 118, pp.2234-2239. ⟨hal-00124476⟩
Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation
R. Rengel, J. Mateos, T. Gonzales, D. Pardo, Gilles Dambrine, Francois Danneville, M.J. Martin
2005, pp.497-502. ⟨hal-00125307⟩
Low power 23 GHz and 27 GHz distributed cascode amplifiers in a standard 130 nm SOI CMOS process
C. Pavageau, A. Siligaris, L. Picheta, Francois Danneville, M. Si Moussa, J.P. Raskin, D. Vanhoenacker-Janvier, J. Russat, N. Fel
2005, pp.2243-2246. ⟨hal-00125311⟩
Noise in SOI MOSFETs and gate-all-around transistors
B. Iniguez, A. Lazaro, H.A. Hamid, G. Pailloncy, Gilles Dambrine, Francois Danneville
18th International Conference on Noise and Fluctuations, ICNF 2005, 2005, Salamanca, Spain. ⟨hal-00125321⟩
A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s photoreceiver
G. Wolf, H. Happy, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, Gilles Dambrine
2005, pp.27-29. ⟨hal-00125306⟩
Excitonic effects in boron nitride nanotubes
L. Wirtz
Réunion générale du GDR-DFT, 2005, Cap d'Agde, France. ⟨hal-00126429⟩