Publicaciones
Affichage de 13311 à 13320 sur 16279
Microvalves magnéto-statiques et magnétostrictives pour microjets pulsés pour le contrôle actif d'écoulements aérodynamiques
Philippe Pernod, Vladimir Preobrazhensky, O. Ducloux, Abdelkrim Talbi, Y. Deblock, Nicolas Tiercelin, A. Merlen
GDR Contrôle des décollements, 2005, Paris, France. ⟨hal-00137668⟩
Conjugaison de phase appliquée au CND
Philippe Pernod, Vladimir Preobrazhensky
Journée Technique Contrôle Non Destructif, 2005, Villeneuve d'Ascq, France. ⟨hal-00137669⟩
Dry etchnig of PZT thin films for bilayer actuator realization
Caroline Soyer, E. Fribourg-Blanc, Eric Cattan, Denis Remiens
2005, pp.203-211. ⟨hal-00138428⟩
Ion beam etching of PZT thin films : influence of grain size on the damages induced
Caroline Soyer, Eric Cattan, Denis Remiens
Journal of the European Ceramic Society, 2005, 25, pp.2269-2272. ⟨hal-00138431⟩
Determination by indentation method of sputtered PZT films mechanical parameters for Si-MEMs applications
P. Delobelle, E. Fribourg-Blanc, O. Guillon, Caroline Soyer, Eric Cattan, Denis Remiens
2005, pp.213-221. ⟨hal-00138429⟩
Application of phase conjugation of ultrasound in nondestructive testing of objects with corrugated surface
L. Krutyansky, Philippe Pernod, K. Yamamoto
Physics of Wave Phenomena, 2005, 13, pp.87-90. ⟨hal-00138389⟩
Preparation of highly (100)-oriented LaNiO3 nanocrystalline films by metalorganic chemical liquid exposition
G.S. Wang, Q. Zhao, X.J. Meng, J.H. Chu, Denis Remiens
Journal of Crystal Growth, 2005, 277, pp.450-456. ⟨hal-00138414⟩
A Gm−C low−pass filter for zero−IF mobile applications with a very wide tuning range
D. Chamla, A. Kaiser, A. Cathelin, D. Belot
IEEE Journal of Solid-State Circuits, 2005, 40, pp.1443− 1450. ⟨hal-00138393⟩
Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps
Y. Guhel, B. Boudart, N. Vellas, Christophe Gaquière, E. Delos, D. Ducatteau, Z. Bougrioua, Marie Germain
Solid-State Electronics, 2005, 49, pp.1589-1594. ⟨hal-00154914⟩
Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls
Nicolas Wichmann, I. Duszynski, X. Wallart, S. Bollaert, A. Cappy
IEEE Electron Device Letters, 2005, 26, pp.601-603. ⟨hal-00154894⟩