Publicaciones

• Communication dans un congrès

Thickness dependent morphology and resistivity of ultra-thin Al films on Si(111) by molecular beam expitaxy

D.K. Aswal, N. Joshi, A.K. Debnath, S.K. Gupta, D. Vuillaume, J.V. Yakhmi

Trends in NanoTechnology, TNT 2005, 2005, Oviedo, Spain. ⟨hal-00125603⟩

• Communication dans un congrès

Optical gating of polymer-coated carbon nanotube transistors

J. Borghetti, S. Lenfant, Vincent Derycke, P. Chenevier, A. Filoramo, M. Goffman, D. Vuillaume, J.P. Bourgoin

ElecMol'05, 2005, Grenoble, France. ⟨hal-00125606⟩

• Article dans une revue

Experimental evidence of backward wave on terahertz left-handed transmision lines

T. Crepin, Jean-Francois Lampin, T. Decoopman, X. Melique, L. Desplanque, D. Lippens

Applied Physics Letters, 2005, 87, pp.104105-1-3. ⟨hal-00125345⟩

• Article dans une revue

Modeling and experimental validation of sharpening mechanism based on thermal oxidation for fabrication of ultra-sharp silicon nanotips

Vincent Agache, Roger Ringot, Patrice Bigotte, Vincent Senez, Bernard Legrand, Lionel Buchaillot, Dominique Collard

This paper aims at modeling the thermal oxidation of silicon pillars leading to the formation of very sharp silicon tips. The model is used to determine optimum process parameters with respect to the initial shape of the silicon pillars and the geometry of the desired tip. The modeling concept is...

IEEE Transactions on Nanotechnology, 2005, 4, pp.548-556. ⟨10.1109/TNANO.2005.851386⟩. ⟨hal-00125632⟩

• Communication dans un congrès

Characterization of vertical vibration of electrostatically actuated resonators using Atomic Force Microscope in noncontact mode

Vincent Agache, Bernard Legrand, K. Nakamura, H. Kawakatsu, Lionel Buchaillot, Hiroshi Toshiyoshi, Dominique Collard, Hiroyuki Fujita

Non contact mode atomic force microscope (AFM) direct characterization of out-of-plane fixed-fixed high frequency microelectromechanical resonators is examined while applying the excitation voltage to integrated electrostatic transducers. Non contact mode is rather used than contact mode in order...

The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005, Jun 2005, Seoul, South Korea. pp.2023-2026, ⟨10.1109/SENSOR.2005.1497499⟩. ⟨hal-00125631⟩

• Article dans une revue

The effect of LaNiO3 bottom electrode thickness on ferroelectric and dielectric properties of (100) oriented PbZr0.53Ti0.47O3 films

G.S. Wang, Denis Remiens, Caroline Soyer, El Hadj Dogheche, Eric Cattan

The (1 0 0) oriented LaNiO3 (LNO) films with different thickness were prepared on SiO2/Si substrate by a modified metallorganic decomposition process. PbZr0.53Ti0.47O3 (PZT) films (∼1 μm) subsequently deposited on LNO by modified sol–gel process. The X-ray diffraction measurements show PZT films...

Journal of Crystal Growth, 2005, 284 (1-2), pp.184-189. ⟨10.1016/j.jcrysgro.2005.07.014⟩. ⟨hal-00130818⟩

• Article dans une revue

Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate

G. Larrieu, Emmanuel Dubois

This paper demonstrates the successful integration of Schottky barrier (SB) MOSFETs that feature platinum silicide (PtSi) source/drain and a tungsten midgap gate down to a length of 40 nm. SB MOSFETs are shown to steadily progress with respect to conventional highly doped source/drain with a...

IEEE Transactions on Electron Devices, 2005, 52 (12), pp.2720-2726. ⟨10.1109/TED.2005.859703⟩. ⟨hal-00138397⟩

• Communication dans un congrès

Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

R. Rengel, J. Mateos, T. Gonzales, D. Pardo, Gilles Dambrine, Francois Danneville, M.J. Martin

2005, pp.497-502. ⟨hal-00125307⟩

• Communication dans un congrès

Low power 23 GHz and 27 GHz distributed cascode amplifiers in a standard 130 nm SOI CMOS process

C. Pavageau, A. Siligaris, L. Picheta, Francois Danneville, M. Si Moussa, J.P. Raskin, D. Vanhoenacker-Janvier, J. Russat, N. Fel

2005, pp.2243-2246. ⟨hal-00125311⟩

• Communication dans un congrès

Tensile stress determination in silicon nitride membrane by AFM characterization

A.S. Rollier, Bernard Legrand, D. Deresmes, M. Lagouge, D. Collard, L. Buchaillot

2005, pp.828-831. ⟨hal-00125660⟩