Publicaciones

• UNDEFINED

Ambipolar charge injection and transport in a single pentacene monolayer island

Thomas Heim, Kamal Lmimouni, Dominique Vuillaume

Electrons and holes are locally injected in a single pentacene monolayer island. The two-dimensional distribution and concentration of the injected carriers are measured by electrical force microscopy. In crystalline monolayer islands, both carriers are delocalized over the whole island. On...

2004. ⟨hal-00002914⟩

• ART

Microfluidic design rules for capillary slot-based electrospray sources

M. Brinkmann, R. Blossey, S. Arscott, C. Druon, P. Tabourier, S. Le Gac, C. Rolando

Applied Physics Letters, 2004, 85 (11), pp.2140-2142. ⟨10.1063/1.1792381⟩. ⟨hal-02347731⟩

• PATENT

Procédé de réalisation d'un microrésonateur piézoélectique accordable

P. Robert, G. Caruyer, P. Ancey, G. Bouche

N° de brevet: FR2852165 (A1). 2004. ⟨hal-00372445⟩

• UNDEFINED

Localization and delocalization of charges injected in DNA

Thomas Heim, Thierry Melin, D. Deresmes, Dominique Vuillaume

The electrical properties of DNA molecules are investigated by charge injection and electric force microscopy experiments. Prior to injection, DNA molecules exhibit a weak positively charged state. We probe the electrical behaviour of DNA by measuring the localized or delocalized character of the...

2004. ⟨hal-00002773⟩

• COMM

Monolithic integration of a low power piezoelectric transformer

Dejan Vasic, Emmanuel Sarraute, François Costa, Patrick Sangouard, Eric Cattan

EPE-PEMC 2004, Sep 2004, Riga, Lithuania. ⟨hal-00843669⟩

• ART

A nanometric electron multiplexer

Róża Kucharczyk, Leonard Dobrzynski, B. Djafari-Rouhani, Abdellatif Akjouj

Physica E: Low-dimensional Systems and Nanostructures, 2004, 24 (3-4), pp.355-360. ⟨10.1016/j.physe.2004.06.037⟩. ⟨hal-04070894⟩

• ART

Piezoelectric microtransformer based on PZT unimorph membrane

Dejan Vasic, François Costa, Emmanuel Sarraute, Patrick Sangouard, Eric Cattan

Journal of Micromechanics and Microengineering, 2004, 14 (9), pp.90-96. ⟨hal-00920234⟩

• PATENT

High density MOS transistor using source/ drain Schottky contacts

Emmanuel Dubois

France, Patent n° : US6774451. 2004. ⟨hal-04249505⟩

• ART

1-octadecene monolayers on Si(111) hydrogen-terminated surfaces : effect of substrate doping

Corinne Miramond, Dominique Vuillaume

We have studied the electronic properties, in relation to structural properties, of monolayers of 1-octadecene attached on a hydrogen-terminated (111) silicon surface. The molecules are attached using the free-radical reaction between CC and SiH activated by an ultraviolet illumination. We have...

Journal of Applied Physics, 2004, 96 (3), pp.1529-1536. ⟨10.1063/1.1767984⟩. ⟨hal-00140729⟩

• ART

Design optimization of AlInAs-GaInAs HEMTs for low-noise applications

Javier Mateos, Tomás González, Daniel Pardo, S. Bollaert, Thierry Parenty, A. Cappy

In order to optimize the low-noise performance of 50-nm-gate AlInAs-GalnAs high-electron mobility transistors (HEMTs), by using an ensemble Monte Carlo simulation we study the influence of three important technological parameters on their noise level: the doping of the /spl delta/-doped layer, the...

IEEE Transactions on Electron Devices, 2004, 51 (8), pp.1228-1233. ⟨10.1109/TED.2004.832095⟩. ⟨hal-00133870⟩