Publicaciones

Affichage de 13541 à 13550 sur 16458


  • Communication dans un congrès

Explicit versus implicit finite-difference approximation for semiconductor device time-domain macroscopic numerical modelling on parallel computer

A. El Moussati, Christophe Dalle

Proceedings of the 15th Workshop on Modelling and Simulation of Electron Devices, 2005, Pisa, Italy. ⟨hal-00131335⟩

  • Article dans une revue

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, Marie Germain, Jean-Claude de Jaeger, Christophe Gaquière

Microwave and Optical Technology Letters, 2005, 46, pp.311-315. ⟨hal-00126457⟩

  • Communication dans un congrès

Organic field effect transistor based on a novel soluble pentacene precursor and operating at low voltages

D. Zander, N. Hoffmann, K. Lmimouni, S. Lenfant, C. Petit, D. Vuillaume

14th Biennial Conference on Insulating Films on Semiconductors, 2005, Belgium. pp.394-397, ⟨10.1016/j.mee.2005.04.096⟩. ⟨hal-00247650⟩

  • Article dans une revue

Reaction pathways during the thermal conversion of polysiloxane precursors into oxycarbide ceramics

D. Bahloul-Hourlier, J. Latournerie, P. Dempsey

Journal of the European Ceramic Society, 2005, 25, pp.979-985. ⟨10.1016/j.jeurceramsoc.2004.05.012⟩. ⟨hal-00247488⟩

  • Article dans une revue

Biaxial initial stress characterization of bilayer gold RF-switches

K. Yacine, F. Flourens, David Bourrier, Ludovic Salvagnac, P. Calmont, X. Lafontan, Q.H. Duong, L. Buchaillot, D. Peyrou, Patrick Pons, Robert Plana

Microelectronics Reliability, 2005, 45, pp.1776-1781. ⟨10.1016/j.microrel.2005.07.093⟩. ⟨hal-00128652⟩

  • Communication dans un congrès

On the high-frequency noise figures of merit and microscopic channel noise sources in fabricated 90 nm PD SOI MOSFETs

R. Rengel, M.J. Martin, G. Pailloncy, Gilles Dambrine, Francois Danneville

2005, pp.745-748. ⟨hal-00125309⟩