Publicaciones

• Communication dans un congrès

Fundamental Lamb waves scattering from a sudden thickness variation in a plate

Farouk Benmeddour, Sébastien Grondel, Emmanuel Moulin, Jamal Assaad

4th Anglo-French Physical Acoustics Conference, 2005, Le Havre, France. ⟨hal-00140412⟩

• Communication dans un congrès

Role of interfaces on the direct tunneling and the inelastic tunneling behaviors through metal/alkylsilane/silicon junctions

D.K. Aswal, C. Petit, G. Salace, David Guérin, S. Lenfant, J.V. Yakhmi, D. Vuillaume

Trends in NanoTechnology, TNT 2005, 2005, Oviedo, Spain. ⟨hal-00125602⟩

• Communication dans un congrès

Inelastic tunneling spectra of an alkyl self-assembled monolayer using a MOS tunnel junction as a test-bed

C. Petit, G. Salace, S. Lenfant, D. Vuillaume

14th Biennial Conference on Insulating Films on Semiconductors, 2005, Belgium. pp.398-401, ⟨10.1016/j.mee.2005.04.011⟩. ⟨hal-00247649⟩

• Communication dans un congrès

Nouveau dispositif d'analyse hyperfréquence des biomolécules

Nour Eddine Bourzgui, Vianney Mille, F Medjdoub, Bertrand Bocquet

Actes du 2ème Congrès Français de Microfluidique, Dec 2004, Toulouse, France. ⟨hal-00248091⟩

• Communication dans un congrès

Common language and mathematical logic?

Raffaele Pisano

Round–Table Mathesis Latina Workshop, 14 December, Mathesis Latina, Dec 2004, Latina, Italy. ⟨hal-04518917⟩

• Thèse

Simulation Monte Carlo du transport quantique dans les composants nanométriques. Application à l'étude de lasers à cascade quantique térahertz, Monte Carlo simulation of quantum transport in nanodevices, with application to terahertz quantum cascade lasers

Olivier Bonno

Les sources appelées lasers à cascade quantique (LCQ) présentent des potentialités très intéressantes pour l'émission aux fréquences térahertz. Ce travail vise à mieux comprendre les phénomènes physiques à l'origine du transport quantique dans les LCQ. Dans ce but, nous avons utilisé la..., Quantum cascade lasers (QCL) are very interesting sources for lasing operation in the terahertz range. The purpose of this work is to study the quantum transport in these structures with Monte Carlo simulations. The manuscript is composed of three parts. In the first part, we describe the...

Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2004. Français. ⟨NNT : ⟩. ⟨tel-00009033⟩

• Article dans une revue

ANALYTICAL APPROACH TO STUDY NOISE AND VIBRATION OF A SYNCHRONOUS PERMANENT MAGNET MACHINE

A. Ait-Hammouda, Michel Hecquet, M. Goueygou, P. Brochet, A. Randria

Electrical machines operating at variable speed generate vibrations, which can be harmful for the machine itself and for its environment. Thus, it is necessary for the manufacturer to take into account noise and vibration at the design stage. There are many tools and methods of analysis, which...

Electrical Engineering, 2004. ⟨hal-01736407⟩

• Communication dans un congrès

Electrostatic force microscopy of individuallt charged silicon nanoparticles

Thierry Melin, Heinrich Diesinger, D. Deresmes, T. Baron., Sophie Barbet, Didier Stiévenard

We report on charge injection experiments performed on single silicon nanoparticles and their analysis by Electric Force Microscopy (EFM). An analytical model is presented, enabling a quantitative determination of the charge state of the semiconductor nanoparticles from EFM signals, for arbitrary...

MRS Boston Symposium F, Nov 2004, Boston, United States. ⟨hal-00485175⟩

• Communication dans un congrès

Which kind of choice of the infinite in physical sciences ?

Raffaele Pisano

National Congress of Mathesis Society, 18–21 Nov., Mathesis, Nov 2004, Nettuno (Roma), Italy. ⟨hal-04519661⟩

• Article dans une revue

Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain

A. Laszcz, J. Katcki, J. Ratajczak, G. Larrieu, Emmanuel Dubois, X. Wallart

The IrSix contacts have been used in Accumulated Low Schottky Barrier MOSFET on SOI. An IrSix layer is formed as a result of reaction between metal and semiconductor during annealing. The process of silicidation in the Ir/Si/SiO2/Si structure has been studied by means of cross-sectional...

Journal of Alloys and Compounds, 2004, 382, pp.24-28. ⟨10.1016/j.jallcom.2004.03.145⟩. ⟨hal-00140977⟩