Publicaciones

• Communication dans un congrès

Cavitation bubble structures in low and high intensity ultrasonic fields

A. Moussatov, C. Granger, Bertrand Dubus, R. Mettin, T. Tervo, W. Lauterborn

Anglo-French Physical Acoustics Conference, 2004, Wye, United Kingdom. ⟨hal-00133856⟩

• Communication dans un congrès

Technologie pour dispositifs AlInAs/GaInAs

J.S. Galloo, E. Pichonat, S. Bollaert, Yannick Roelens, X. Wallart, A. Cappy

GDR Nanoélectronique, 2004, Aussois, France. ⟨hal-00133917⟩

• Communication dans un congrès

Démultiplexeur nanométriques à plasmons

Maxime Beaugeois, L. Dobrzynski, Abdellatif Akjouj, Bahram Djafari-Rouhani, Jerome O. Vasseur, Mohamed Bouazaoui, Jean-Pierre Vilcot, J.P. Vigneron

GDR Ondes, 2004, Orsay, France. ⟨hal-00141207⟩

• Article dans une revue

Low-loss InGaAsP/InP submicron optical waveguides fabricated by ICP etching

Samuel Dupont, Arnaud Beaurain, Patrice Miska, Malek Zegaoui, Jean-Pierre Vilcot, Hongwu Li, M. Constant, Didier Decoster, Jean Chazelas

The fabrication and characterisation of low-loss InGaAsP/InP optical submicron waveguides made with ICP etching is reported. Their width ranges from 0.2 to 2 μm. For the 0.5 μm width, the propagation losses at λ=1.55 μm as low as 4.2 dB/mm have been measured.

Electronics Letters, 2004, 40, pp.865-866. ⟨hal-00141187⟩

• Communication dans un congrès

P-τ transfromation as the efficient tool for determination of the velocity dispersion characteristics in complex structures

Bogdan Piwakowski, M. Goueygou, A. Fnine, F. Buyle-Bodin

16th World Conference on Non Destructive Testing, WCNDT 2004, 2004, Canada. pp.1-8. ⟨hal-00248102⟩

• Article dans une revue

Depth dependence of defect evolution and TED during annealing

B. Colombeau, N.E.B. Cowern, Fuccio Cristiano, P. Calvo, Y. Lamrani, Nikolay Cherkashin, E. Lampin, Alain Claverie

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.90-94. ⟨hal-00140976⟩

• Article dans une revue

Electrical characterization of Au/n-GaN Schottky diodes.

B. Akkal, Z. Benamara, H. Abid, A. Talbi, Bernard Gruzza

Materials Chemistry and Physics, 2004, pp.31. ⟨hal-00272575⟩

• Article dans une revue

Raman characterization of Mg⁺ ion-implanted GaN

B. Boudart, Y. Guhel, J.C. Pesant, P. Dhamelincourt, M.A. Poisson

Mg+ ions were implanted at room temperature in n-type hexagonal GaN for the device isolation purposes. The implantation dose varied from 7.5 × 1012 to 1016 ions cm-2. We performed resonance Raman spectroscopy and DC electrical measurements in order to monitor the structural and electrical changes...

• Communication dans un congrès

A computational model for the Si/C/N nanopowder

Mohamed Amara, M. El Ganaoui, D. Hourlier

21st International Congress of Theoretical and Applied Mechanics, ICTAM04, 2004, Warsaw, Poland. ⟨hal-00248023⟩

• Communication dans un congrès

Premiers résultats de la campagne de sismique réflexion de haute résolution dans les zones affaissées d'un secteur minier du Pas-de-Calais

F. Barrez, J. Mania, J.L. Mansy, F. Meilliez, Bogdan Piwakowski, Brigitte van Vliet-Lanoë

Actes des Journées Nationales de Géotechnique et de Géologie de l'Ingénieur, JNGGI 2004, 2004, Lille, France. ⟨hal-00247820⟩