Publicaciones

• Communication dans un congrès

Formation of nano-domains in alkyltrichlorosilane self-assembled monolayers deposited on silicon : applications to molecular electronics

S. Desbief, L. Patrone, D. Goguenheim, D. Vuillaume

Ultimate Lithography and Nanodevice Engineering, 2004, Agelonde, France. ⟨hal-00140740⟩

• Article dans une revue

Residual stress profiling of an aluminum alloy by laser ultrasonics

Y. Pan, M. Qian, Wei-Jiang Xu, Mohamed Ourak

Acta Acustica united with Acustica, 2004, 29, pp.254-257. ⟨hal-00162794⟩

• Communication dans un congrès

Pilot symbol assisted modulation for power line communication

David Buèche, Patrick Corlay, Marc G. Gazalet, François-Xavier Coudoux, Marc Slachciak

Power lines provide medium for high data rate communications. Experimental results point out that the channel is stationary piecewise with sudden variations. Moreover, the channel is frequency selective in the range 0-25 MHz. Pilot symbol assisted modulation, which consists in a discrete multitone...

IEEE International Symposium on Industrial Electronics, May 2004, Ajaccio, France. pp.717-720, ⟨10.1109/ISIE.2004.1571894⟩. ⟨hal-00141979⟩

• Communication dans un congrès

Low frequency noise behaviour in GaN HEMT's on silicon substrate

Laurent Bary, E. Angeli, Abdelali Rennane, Geoffroy Soubercaze-Pun, Jean-Guy Tartarin, Jean-Claude de Jaeger, Y. Cordier, S. Delage, Robert Plana, Jacques Graffeuil

2004, pp.286-295. ⟨hal-00141967⟩

• Article dans une revue

Noise modeling in fully depleted SOI MOSFETs

G. Pailloncy, B. Iniguez, Gilles Dambrine, J.P. Raskin, Francois Danneville

Solid-State Electronics, 2004, 48, pp.813-825. ⟨hal-00133880⟩

• Communication dans un congrès

Bruit haute fréquence dans les transistors MOS sur SOI : méthodes de caractérisations et de modélisations

G. Pailloncy

WORKSHOP Laboratoire Commun IEMN/ST Microelectronics, 2004, Crolles, France. ⟨hal-00133898⟩

• Communication dans un congrès

Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

Jean-Sebastien Galloo, Emmanuelle Pichonat, Yannick Roelens, S. Bollaert, X. Wallart, A. Cappy, Javier Mateos, Tomás González, Hervé Boutry, Vincent Bayot, Lukasz Bednarz, Isabelle Huynen

We have developed technolow based on GaInAs/AIInAs for building ballistic devices working at room temperature. We present processes for ballistic devices (T-Branch Junctions (TBJs), YBranch Junctions (YBJs)). Then we present DC Characterization of TBJs to show the transition from ballistic to ohmic...

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, May 2004, Kagoshima, Japan. pp.378-381, ⟨10.1109/ICIPRM.2004.1442734⟩. ⟨hal-00133896⟩

• Communication dans un congrès

Composants balistiques

S. Bollaert

Journées Nationales Microélectronique et Optoélectronique, 2004, La Grande Motte, France. ⟨hal-00133910⟩

• Autre publication scientifique

Etude des aspects électrothermiques de la filière HEMT AlGaN/GaN pour application de puissance hyperfréquence

Raphaël Aubry

2004. ⟨hal-00133927⟩

• Communication dans un congrès

FinFET achievement : optimum e-beam lithography to etch dense silicon fins networks

F. Fruleux, J. Penaud, Emmanuel Dubois, G. Larrieu

MIGAS International Summer School on Advanced Microelectronics, MIGAS'04, 2004, Autrans, France. ⟨hal-00140996⟩