Publicaciones

• Communication dans un congrès

2D numerical simulation of supercritical phase conjugation of ultrasound in active solid

Olivier Bou Matar, Vladimir Preobrazhensky, Philippe Pernod

2004, pp.1627-1630. ⟨hal-00162781⟩

• Communication dans un congrès

Principles of ultrasonic velocimetry by means of nonlinear interaction of phase conjugate waves

Y. Pyl'Nov, Vladimir Preobrazhensky

2004, pp.1612-1615. ⟨hal-00162782⟩

• Article dans une revue

Analysis of low frequency drain current noise in AlGaN/GaN HEMTs on Si substrate

N. Malbert, N. Labat, A. Curutchet, A. Touboul, Christophe Gaquière, A. Minko

Fluctuation and Noise Letters, 2004, 4, pp.L319-L328. ⟨hal-00162793⟩

• Communication dans un congrès

Semi-blind estimation in a DMT-based transmission on indoor power line

Virginie Degardin, M. Lienard, Pierre Degauque

2004, pp.195-199. ⟨hal-00142017⟩

• Article dans une revue

Aluminum, oxide and silicon phonons by IETS on MOS tunnel junctions : accurate determination and effect of electrical stress

C. Petit, G. Salace, D. Vuillaume

Journal of Applied Physics, 2004, 96, pp.5042-5049. ⟨hal-00140733⟩

• Article dans une revue

Conductivity of DNA probed by conducting-atomic force microscopy : effects of contact electrode, DNA stucture and surface interactions

T. Heim, D. Deresmes, Dominique Vuillaume

Journal of Applied Physics, 2004, 96, pp.2927-2936. ⟨10.1063/1.1769606⟩. ⟨hal-00140730⟩

• Autre publication scientifique

Contribution à l'optimisation de transistors à effet de champ MESFET à base de carbure de silicium 4 H pour applications en amplification de puissance RF/hyperfréquence

A. Kerlain

2004. ⟨hal-00141954⟩

• Article dans une revue

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices

Marie-Antoinette Di Forte-Poisson, M. Magis, Maurice Tordjman, Raphaël Aubry, Nicolas Sarazin, M. Peschang, Erwan Morvan, Sylvain Laurent Delage, J. Di Persio, R. Quere, B. Grimbert, Virginie Hoel, E. Delos, Damien Ducatteau, Christophe Gaquière

This paper reports on the LP-MOCVDgrowth optimisation of GaAlN/GaN heterostructures grown on silicon carbide substrates for HEMT applications, and on the first device performances obtained with these structures. The critical impact of some growth parameters on the physical properties of the GaAlN/...

Journal of Crystal Growth, 2004, 272 (1-4), pp.305-311. ⟨10.1016/j.jcrysgro.2004.08.121⟩. ⟨hal-00141957⟩

• Article dans une revue

Matching ultrasonic transducer using two matching layers where one of them is glue

Dorothée Debavelaere-Callens, C. Bruneel, Jamal Assaad

NDT & E International, 2004, 37, pp.591-596. ⟨hal-00141975⟩

• Article dans une revue

Design of a wide-angle spectrum source for material characterization : point low-frequency ultrasonic sensor

Georges Nassar, Bertrand Nongaillard

NDT & E International, 2004, 37, pp.481-488. ⟨hal-00141974⟩