Publicaciones

• Communication dans un congrès

Electrical transport in organic nanostructures

D. Vuillaume

French-Japan Workshop on Nanomaterials, 2004, Bordeaux, France. ⟨hal-00140754⟩

• Communication dans un congrès

Miniature flextensional piezoelectric transducers with rectangular geometry for improved in-water acoustic bandwidth and power

D.C. Markley, R.J. Meyer, R.E. Newnham, Anne-Christine Hladky

2004 IEEE International Ultrasonics, Ferroelectrics, and Frequency Control Joint 50th Anniversary Conference, 2004, Montreal, Canada. ⟨hal-00133860⟩

• Communication dans un congrès

Transmission Electron Microscopy analysis of MOSFET structures

A. Laszcz, J. Katcki, J. Ratajczak, Emmanuel Dubois, G. Larrieu, X. Wallart, Xing Tang

School on Materials Science and Electron Microscopy, Emerging Microscopy for Advanced Materials Development-Imaging and Spectroscopy on Atomic Scale, 2004, Berlin, Germany. ⟨hal-00140997⟩

• Communication dans un congrès

Monolithic multimode transducers prototyped using extrusion and fused deposition of ceramics (FDC) techniques

D. Markley, R. Newnham, Anne-Christine Hladky, J. Cochran, R. Meyer, A. Safari, M. Allahverdi

2004 US Navy Workshop on Acoustic Transduction Materials and Devices, 2004, State College, PA, United States. ⟨hal-00133857⟩

• Article dans une revue

Impact of downscaling on high-frequency noise performance of bulk and SOI MOSFETs

G. Pailloncy, C. Raynaud, M. Vanmackelberg, Francois Danneville, Sylvie Lepilliet, J.P. Raskin, Gilles Dambrine

IEEE Transactions on Electron Devices, 2004, 51, pp.1605-1612. ⟨hal-00133871⟩

• Communication dans un congrès

Photonic band gap materials

D. Lippens

28th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE'04, 2004, Smolenice, Slovakia. ⟨hal-00133957⟩

• Communication dans un congrès

Ballistic GaInAs/AlInAs devices technology and characterization at room temperature

J.S. Galloo, Yannick Roelens, S. Bollaert, Emmanuelle Pichonat, X. Wallart, A. Cappy, Javier Mateos, Tomás González

We have developed technology based on GaInAs/AlInAs for building ballistic devices working at room temperature. We first present here processes for passive and active devices (T-branch junctions (TBJs), Y-branch junctions (YBJs) and TBJs with Schottky gates. Then, we present DC characterization of...

4th IEEE Conference on Nanotechnology, Aug 2004, Munich, Germany. pp.98-100, ⟨10.1109/NANO.2004.1392262⟩. ⟨hal-00133881⟩

• Communication dans un congrès

InAlAs/InGaAs double gate HEMTS with high extrinsic transconductance

Nicolas Wichmann, I. Duszynski, T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy

2004, pp.295-298. ⟨hal-00133877⟩

• Article dans une revue

Quantitative analysis of the vibration modes in a finite set of coupled spheres

Anne-Christine Hladky, Arnaud Devos, M. de Billy

Journal of the Acoustical Society of America, 2004, 116, pp.117-124. ⟨hal-00133848⟩

• Communication dans un congrès

Near-field levitation generated by ultrasonic vibrations : theoretical analysis and experiments

Anne-Christine Hladky, C. Granger, G. Haw, Bertrand Dubus

2004, pp.623-624. ⟨hal-00142046⟩