Publicaciones

• COMM

Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement

Jean-Claude Jacquet, Raphaël Aubry, H. Gerard, E. Delos, Nathalie Rolland, Yvon Cordier, A. Bussutil, Michel Rousseau, Sylvain Laurent Delage

GaN and its related alloys constitute a family of wide bandgap semiconductors suitable to optoelectronics and power microwave applications. For the latter applications, their high breakdown fields in the 3MV/cm range and their high peak electron velocity above 107cm/s are crucial. The high electron...

12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238. ⟨hal-00142308⟩

• COMM

Novel 2D interfaces for nanoelectrospray mass spectrometry

S. Arscott, S. Le Gac, C. Druon, P. Tabourier, C. Rolando

2004, pp.316-319. ⟨hal-00140770⟩

• COMM

Caractérisation comparative de transducteurs bimorphes AlN/Si et PZT/Si à modes de flexion.

Karim Dogheche, Laurent Robert, W. Daniau, S. Ballandras, J.-C. Jeannot

Journées Couches Ferroélectriques JCF 2004, Besançon, 2004, France. ⟨hal-00135639⟩

• COMM

Evaluation of coding's methods for the development of a radar sensor for localization and communication dedicated to guided transport

C. Tatkeu, Yassin El Hillali, Atika Rivenq, Jean-Michel Rouvaen

2004, pp.2244-2247. ⟨hal-00154891⟩

• COUV

Technique de déconvolution aveugle appliquée au contrôle non destructif par micro-ondes

D. Glay, T. Lasri

PLACKO D., ORTEU J.J., LEPOUTRE F. Instrumentation - Aspects fondamentaux, Hermès, pp.189-196, 2004. ⟨hal-00132298⟩

• COMM

Experimental analysis of a multi-conductor uniform line above soil for modelling a railway line

A. Cozza, F. Canavero, B. Demoulin, J.M. Bodson, V. Sabate, J.M. Vanzemberg

12ème Colloque International et Exposition sur la Compatibilité Electromagnétique, CEM'04, 2004, Toulouse, France. pp.37-42. ⟨hal-00509724⟩

• COMM

AC-only RF-ID tags for barcode replacement

S. Briole, C. Pacha, K. Goser, A. Kaiser, R. Thewes, W. Weber, R. Brederlow

2004, pp.438-537. ⟨hal-00140988⟩

• ART

Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED

E. Lampin, Fuccio Cristiano, Y. Lamrani, B. Colombeau

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.95-99. ⟨hal-00140975⟩

• ART

Electric force microscopy of individually charged semiconductor nanoparticles on conductive substrates : an analytical model for quantitative charge imaging

Thierry Melin, H. Diesinger, D. Deresmes, D. Stievenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69, pp.035321/1-8. ⟨hal-00141248⟩

• COMM

Unusual quantum confinement in IV-VI materials

Guy Allan, Christophe Delerue

The effect of quantum confinement in PbSe quantum wells and dots is studied using tight binding calculations. Compared to zinc-blende semiconductors, unusual physical properties are predicted for rock salt PbSe nanostructures. The energy gap increases as the inverse of the size both for wells and...

European Materials Research Society Spring Meeting, May 2004, Strasbourg, France. ⟨10.1016/j.msec.2005.06.026⟩. ⟨hal-00141286⟩