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Affichage de 1391 à 1400 sur 16179

Article dans une revue

Modeling for nonlinear acoustic imaging of an isolated crack via standing waves in a 2D solid

Vladislav Aleshin, Ravi Verma, Kevin Truyaert

AbstractThis paper is concerned with numerical modeling for nondestructive imaging of defects in solids via standing waves excited by a periodic sinewave signal. The stationary solution, purely sinusoidal in an intact sample, contains higher harmonics when damage is present. These harmonics are...

Ultrasonics, 2023, 133, pp.107023. ⟨10.1016/j.ultras.2023.107023⟩. ⟨hal-04107466⟩

Article dans une revue

Charge-Dependent Flexural Rigidity of a Conductive Polymer Laminate for Bioinspired Non-thermal Compliance Modulation

Yauheni Sarokin, Vadim Becquer, Eric Cattan, Alvo Aabloo, Indrek Must

Material-level stiffness modulation allows for the creation of controllable energy-dissipating structures for auxiliary and training exoskeletons and the manipulation of delicate objects and tissues. These use cases require simple control systems and disfavour thermally driven solutions. Many...

Lecture Notes in Computer Science, 2023, Part of the book series: Lecture Notes in Computer Science, following Conference on Biomimetic and Biohybrid Systems, 14157, pp.109-116. ⟨10.1007/978-3-031-38857-6_8⟩. ⟨hal-05495756⟩

Article dans une revue

An efficient cobalt-nickel phosphate positive electrode for high-performance hybrid microsupercapacitors

Min Li, Chen Jia, Danyu Zhang, Yunyun Luo, Yintao Ma, Guoxi Luo, Libo Zhao, Lu Wang, Zhikang Li, Qijing Lin, Ping Yang, Nan Zhu, Rabah Boukherroub, Zhuangde Jiang

Flexible energy storage devices play significant role in wearable and portable electronics. Herein, a cobalt-nickel phosphate (CoNiP2O7) composite was synthesized on conductive carbon nanotubes (CNTs) substrate by facile one-step electrochemical deposition method, forming a binder-free CoNiP2O7@...

Journal of Energy Storage, 2023, 64, pp.107144. ⟨10.1016/j.est.2023.107144⟩. ⟨hal-04068689⟩

Article dans une revue

High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

G. Di Gioia, E. Frayssinet, M. Samnouni, V. Chinni, P. Mondal, J. Treuttel, X. Wallart, M. Zegaoui, Guillaume Ducournau, Yannick Roelens, Yvon Cordier, Mohamed Zaknoune

Quasi-vertical gallium nitride (GaN) Schottky diodes on silicon carbide (SiC) substrates were fabricated for frequency multiplier applications. The epitaxial structure employed had an n− layer of 590 nm with doping 6.6 × 1016 cm−3, while the n+ layer was 950 nm thick, with doping 2 × 1019 cm−3....

Journal of Electronic Materials, 2023, 52, pp.5249-5255. ⟨10.1007/s11664-023-10499-3⟩. ⟨hal-04115301⟩

Article dans une revue

[Review] Graphene loaded with metal nanoparticles/complexes catalyzed cross-coupling reactions: A review

Maryam Mirza-Aghayan, Amir Sepehr Moieni, Rabah Boukherroub

AbstractVarious catalytic reactions under suitable conditions were used for the carbon-carbon (C-C) bond formation, such as the Kumada, Mizoroki-Heck, Sonogashira, Negishi, Stille, Suzuki-Miyaura, Hiyama, andFukuyama cross-coupling reactions. Supporting metal nanoparticles or complexes on...

Journal of Organometallic Chemistry, 2023, 995, pp.122737. ⟨10.1016/j.jorganchem.2023.122737⟩. ⟨hal-04097170⟩

Article dans une revue

Sub‐Micron thick Step‐Graded AlGaN Buffer on Silicon with a High Buffer Breakdown Field

Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Kathia Harrouche, Fabrice Semond, Farid Medjdoub

We report on a sub-micron thick AlGaN/GaN high electron mobility transistor (HEMT) epilayers grown on silicon substrate with a state-of-the art vertical buffer breakdown field as high as 6 MV/cm enabling a high transistor breakdown voltage of 250 V for short gate to drain distances despite such a...

Physica Status Solidi A (applications and materials science), 2023, 220 (16), pp.2200846. ⟨10.1002/pssa.202200846⟩. ⟨hal-04042888⟩

Article dans une revue

Au@BN-enhanced laser desorption/ionization mass spectrometry and imaging for determination of fipronil and its metabolites in food and biological samples

Yanfang Zhao, Rabah Boukherroub, Guiju Xu, Huijuan Li, Ru-Song Zhao, Qin Wei, Xiang Yu, Xiangfeng Chen

Abstract Gold nanoparticles (AuNPs) represent an attractive inorganic matrix for laser desorption/ionization mass spectrometry (LDI-MS) detection of low-molecular-weight analytes; however, their direct use is hindered by severe aggregation. To limit AuNPs aggregation, hexagonal boron nitride...

Food Chemistry, 2023, 418, pp.135935. ⟨10.1016/j.foodchem.2023.135935⟩. ⟨hal-04053199⟩

Article dans une revue

Highly Si‐doped GaN regrown by MOVPE for ohmic contact applied to quaternary barrier based HEMT

Charles Pitaval, Cédric Lacam, N. Defrance, Christophe Gaquière, Nicolas Michel, Olivier Parillaud, Sylvain Delage

The quaternary barrier InAlGaN is suitable for GaN HEMT power microwave applications. High doping of semiconductor under the drain and source is a known suitable solution to achieve low ohmic contact resistance. However, InAlGaN quaternary alloys require low thermal budget to avoid indium...

Physica Status Solidi A (applications and materials science), 2023, 220 (16), pp.2200476. ⟨10.1002/pssa.202200476⟩. ⟨hal-03875911⟩

Article dans une revue

Saturated long chain fatty acids as possible natural alternative antibacterial agents: opportunities and challenges

Helena Arellano, Véronique Nardello-Rataj, Sabine Szunerits, Rabah Boukherroub, Anne-Laure Fameau

The spread of new strains of antibiotic-resistant pathogenic microorganisms has led to the urgent need to discover and develop new antimicrobial systems. The antibacterial effects of fatty acids have been well-known and recognized since the first experiments of Robert Koch in 1881, and they are now...

Advances in Colloid and Interface Science, 2023, 318, pp.102952. ⟨10.1016/j.cis.2023.102952⟩. ⟨hal-04155565⟩

Communication dans un congrès

Epitaxie localisée de P-GaN par EJM pour la fabrication de HEMTs AlGaN/GaN normally-off, Selective area growth of P-GaN by MBE for the fabrication of AlGaN/GaN normally-off HEMTs

Daniel Rouly, Josiane Tasselli, Patrick Austin, Yvon Cordier, Aimeric Courville, Francois Vaurette, Aurélie Lecestre, Benjamin Reig, Karine Isoird, Frédéric Morancho

RESUME-La technologie des structures HEMT GaN fait l'objet d'importants développements pour les composants de puissance grand gap. Cependant, il est nécessaire de développer des solutions technologiques innovantes pour obtenir des composants normally-off performants. Nous présentons une..., The technology of GaN HEMT structures is the subject of major developments for large-gap power components. However, it is necessary to develop innovative technological solutions to obtain high-performance normally-off devices. We present a new normally-off structure based on a nanostructured P-GaN...

Symposium de génie électrique SGE 2023, Université de Lille, Jul 2023, Lille, France. ⟨hal-04127127⟩