Publicaciones
Affichage de 13931 à 13940 sur 16255
Caractérisation de films d'alcènes greffés sur des surfaces Si(111) par analyse XPS résolue angulairement
X. Wallart, C. Henry de Villeneuve, P. Allongue
2004, pp.152-157. ⟨hal-00140723⟩
Silicon-molecules-metal junctions by nanotransfer printing
C. Merckling, David Guérin, S. Lenfant, D. Vuillaume
French-Japan Workshop on Nanomaterials, 2004, Bordeaux, France. ⟨hal-00140758⟩
Performance improvement of DS-CDMA on the LOS multipath 60 GHz channel using block turbo coding
A. Goalic, W. Sawaya, R. Okouyi, Laurent Clavier
2004, pp.133-136. ⟨hal-00142300⟩
Influence of passivation on high-power AlGaN/GaN HEMT devices at 10 GHz
D. Ducatteau, M. Werquin, Christophe Gaquière, D. Theron, T. Martin, E. Delos, B. Grimbert, E. Morvan, N. Caillas, Virginie Hoel, Jean-Claude de Jaeger, S. Delage
2004, pp.203-206. ⟨hal-00142304⟩
Physical analysis of the breakdown phenomenon between single or double step gate recess HEMTs
M. Elkhou, Michel Rousseau, H. Gerard, Jean-Claude de Jaeger
2004, pp.571-574. ⟨hal-00142307⟩
Effect of 3D antenna parameters on MIMO systems with experimental validation in a reverbating chamber
O. Delangre, P. de Doncker, M. Lienard, Pierre Degauque
Proceedings of the 11th Symposium on Communications and Vehicular Technology in the Benelux, SCVT 2004, 2004, Gent, Belgium. ⟨hal-00142326⟩
Plateforme SAW dédiée à la microfluidique discrète pour applications biologiques
A. Renaudin, P. Tabourier, V. Zhang, C. Druon
Actes du 2ème Congrès Français de Microfluidique, 2004, Toulouse, France. ⟨hal-00142067⟩
Mesures pulsées haute température en mode DC et RF de HEMTs AlGaN/GaN sur substrat silicium haute résistivité
M. Werquin, D. Ducatteau, N. Vellas, D. Jambon, D. Theron, E. Delos, N. Caillas, Y. Cordier, Jean-Claude de Jaeger, S. Delage, Christophe Gaquière
GDR Grand Gap, 2004, Fréjus, France. ⟨hal-00141965⟩
Propagation characteristics in subway tunnels : application to a communication and distance measurement system
M. Lienard, Pierre Degauque, Pierre Laly
2004, pp.240-243. ⟨hal-00142024⟩
High microwave and noise performance of 0.17µm AlGaN/GaN HEMTs on high-resistivity silicon substrates
A. Minko, Virginie Hoel, Sylvie Lepilliet, Gilles Dambrine, Jean-Claude de Jaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
IEEE Electron Device Letters, 2004, 25, pp.167-169. ⟨hal-00141951⟩