Publicaciones

• COMM

Microfluidique pour l'analyse des protéines exprimées par des cellules cancéreuses isolées sur un microréseau d'immobilisation

E. Galopin, N. Verplanck, V. Thomy, Rabah Boukherroub, H. Hondermarck, J.C. Camart, C. Druon, P. Tabourier

Actes du 2ème Congrès Français de Microfluidique, 2004, Toulouse, France. ⟨hal-00142066⟩

• ART

The evaluation of surface residual stress in aeronautic bearings using the Barkhausen noise effect

S. Desvaux, Marc Duquennoy, J. Gualandri, Mohamed Ourak

NDT & E International, 2004, 37, pp.9-17. ⟨hal-00142004⟩

• COMM

Effect of objects into cavities on the field distribution : experimental analysis

S. Baranowski, L. Kone, B. Demoulin

2004, pp.739-743. ⟨hal-00142336⟩

• COMM

Millimeter ultra wide band positioning system

Michael Bocquet, Christophe Loyez, A. Benlarbi-Delai

2004, pp.265-268. ⟨hal-00142284⟩

• COMM

Performances of AlGaN/GaN HEMTs in planar technology

M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, Marie Germain, Jean-Claude de Jaeger, Christophe Gaquière

2004, pp.303-306. ⟨hal-00142305⟩

• ART

Simulation of dual array multipath channels using mode stirred reverberation chamber

M. Lienard, Pierre Degauque

Electronics Letters, 2004, 40, pp.578-580. ⟨hal-00142000⟩

• COMM

Transmission electron microscopy of silicides used in ALSB-SOI MOSFET structure

J. Katcki, J. Ratajczak, A. Laszcz, Emmanuel Dubois, G. Larrieu, X. Baie

2004, pp.479-482. ⟨hal-00147750⟩

• ART

Raman characterization of Mg+ ion-implanted GaN

B. Boudart, Y. Guhel, J. C. Pesant, P. Dhamelincourt, M. A. Poisson

Mg+ ions were implanted at room temperature in n-type hexagonal GaN for the device isolation purposes. The implantation dose varied from 7.5 × 1012 to 1016 ions cm−2. We performed resonance Raman spectroscopy and DC electrical measurements in order to monitor the structural and electrical changes...

Journal of Physics: Condensed Matter, 2003, 16 (2), pp.S49. ⟨10.1088/0953-8984/16/2/006⟩. ⟨hal-02936052⟩

• THESE

Gravure par faisceau d'ions de films minces de titano-zirconate de plomp (PZT) : étude des dégradations engendrées et contribution à l'intégration aux microsystèmes, Ion beam etching of lead titanate-zirconate (PZT) thin films : study of damages induced and contribution to the integration in microsystems

Caroline Soyer

Ces travaux, relatifs à la gravure par faisceau d'ions de films minces de PZT, présentent un ensemble de résultats pouvant être scindés en deux parties. Tout d'abord, nous avons mené une étude originale dont le but est de tenter d'appréhender les mécanismes d'interactions entre..., First of all, we have carried out an original study of which the aim is to try to understand the mechanisms of interactions between an ion beam (reactive or not) and the PZT surface. We have underlined various degradations of material, as well microstructural as electrical. These damages evolve...

Electronique. Université de Valenciennes et du Hainaut-Cambrésis, 2003. Français. ⟨NNT : 2003VALE0038⟩. ⟨hal-00162746⟩

• UNDEFINED

Dispersive charge transport along the surface of an insulating layer observed by Electrostatic Force Microscopy

J. S. Lambert, G. de Loubens, C. Guthmann, M. Saint-Jean, Thierry Melin

We report the observation in the direct space of the transport of a few thousand charges submitted to atunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observedusing the same Electrostatic Force Microscope. During the time range accessible to our...

2003. ⟨hal-00000962⟩