Publicaciones

• Communication dans un congrès

Modélisation de bruit et performances de MOSFETs SOI totalement désertés

G. Pailloncy, B. Iniguez, Gilles Dambrine, M. Dehan, J.P. Raskin, H. Matsuhashi, P. Delatte, Francois Danneville

Workshop Action Spécifique Bruit, 2004, La Grande Motte, France. ⟨hal-00133915⟩

• Communication dans un congrès

Nonlinear noise modeling in FETs for the design of low noise active mixers

Francois Danneville

IEEE MTT-S International Microwave Symposium, Workshop on System-Level Measurement, Modelling, and Design Issues of Mixers, 2004, Fort Worth, TX, United States. ⟨hal-00133911⟩

• Article dans une revue

Prediction of the reflection coefficient of shallow buried objects by a microwave technique

Latifa Achrait-Furlan, T. Lasri, Ahmed Mamouni

In this paper, we propose a low-cost microwave technique to characterize shallow subsurface objects. Experiments and simulations are carried out to explore the possibility of predicting the reflection coefficient, according to one or two dimensions, of buried structures. High and low contrasts...

Microwave and Optical Technology Letters, 2004, 42, pp.335-339. ⟨hal-00133925⟩

• Communication dans un congrès

Simulation Monte Carlo de la dynamique électronique dans les dispositifs optoélectroniques à transitions inter-sous-bandes

Jean-Luc Thobel, Olivier Bonno, François Dessenne

9èmes Journées de la Matière Condensée, JMC9, 2004, Nancy, France. ⟨hal-00133959⟩

• Autre publication scientifique

Mise en œuvre de l'épitaxie par jets moléculaires pour la synthèse de diamant monocristallin

T. Gehin

2004. ⟨hal-00133960⟩

• Communication dans un congrès

Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement

Jean-Claude Jacquet, Raphaël Aubry, H. Gerard, E. Delos, Nathalie Rolland, Yvon Cordier, A. Bussutil, Michel Rousseau, Sylvain Laurent Delage

GaN and its related alloys constitute a family of wide bandgap semiconductors suitable to optoelectronics and power microwave applications. For the latter applications, their high breakdown fields in the 3MV/cm range and their high peak electron velocity above 107cm/s are crucial. The high electron...

12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238. ⟨hal-00142308⟩

• Communication dans un congrès

Low frequency noise and transport mechanisms in AlGaN/GaN HEMT devices

Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Abdelali Rennane, Laurent Bary, Robert Plana, Jean-Claude de Jaeger, Marie Germain, S. Delage, Jacques Graffeuil

European Microwave Week, 2004, Amsterdam, Netherlands. ⟨hal-00141963⟩

• Communication dans un congrès

Systems conception and adaptative calibration technique for S-parameters measurement at 35 GHz

Kamel Haddadi, M. Maazi, D. Glay, T. Lasri

2004, pp.Session 4A. ⟨hal-00142280⟩

• Communication dans un congrès

Novel 2D interfaces for nanoelectrospray mass spectrometry

S. Arscott, S. Le Gac, C. Druon, P. Tabourier, C. Rolando

2004, pp.316-319. ⟨hal-00140770⟩

• Article dans une revue

Electrical and morphological properties of PP and PET conductive polymer fibers

B. Kim, V. Koncar, E. Devaux, C. Dufour, P. Viallier

Synthetic Metals, 2004, 146, pp.167-174. ⟨hal-00140736⟩