Publicaciones

• Autre publication scientifique

Etude et perspective de transistors à hétérostructure AlInAs/GaInAs de longueur de grille inférieure à 100 nm et conception de circuits intégrés en bande G

T. Parenty

2003. ⟨hal-00162732⟩

• Communication dans un congrès

Micro-electromechanical variable-bandwidth IF frequency filters with tunable electrostatical coupling spring

D. Galayko, A. Kaiser, L. Buchaillot, D. Collard, C. Combi

2003, pp.153-156. ⟨hal-00146404⟩

• Article dans une revue

Conduction band offset in the AlxGayIn1–x–yP/Ga0.52In0.48P system as studied by luminescence spectroscopy

D. Vignaud, F. Mollot

The conducton band offset (CBO) in the AlxGayIn1-x-yP/Ga0.52In0.4 8P heterostructures was measured and analyzed. The methods employed for the measurement included photoluminescence and photoluminescence excitation spectroscopy. The parameters involved in the model solid theory were masured...

Journal of Applied Physics, 2003, 93 (1), pp.384. ⟨10.1063/1.1528309⟩. ⟨hal-00018496⟩

• Communication dans un congrès

Conception et fabrication de fils optiques en filière InP

Arnaud Beaurain, Samuel Dupont, Jean-Pierre Vilcot, Didier Decoster, L. Dobrzynski, Bahram Djafari-Rouhani, Abdellatif Akjouj, Jerome O. Vasseur, Mohamed Bouazaoui

Actes du Congrès général de la Société Française de Physique, 2003, Lyon, France. ⟨hal-00146539⟩

• Article dans une revue

Hydrothermal synthesis of PbTiO3 ferroelectric films : characterizations with large frequency and temperature ranges and sensor application

Didier Fasquelle, Jean-Claude Carru, S. Euphrasie, Philippe Pernod, S. Daviero-Minaud

Hydrothermal synthesis is an original way for the deposition of ferroelectric films. It allows to deposit a film with a few micrometers thick on a titanium substrate with various geometrical shapes. X-ray diffraction studies have shown a good nucleation without preferential orientation. S.E.M...

Ferroelectrics, 2003, 288 (1), pp.39-48. ⟨10.1080/00150190390212070⟩. ⟨hal-00146117⟩

• Communication dans un congrès

Nonlinear electron transport in InGaAs/InAlaS ballistic devices

Benoit Hackens, L. Gence, Sébastien Faniel, Cédric Gustin, Hervé Boutry, Lukasz Bednarz, Isabelle Huynen, Vincent Bayot, X. Wallart, A. Cappy, Javier Mateos, Tomás González

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146041⟩

• Communication dans un congrès

Fabrication of nano-ballistic devices using high resolution process

Emmanuelle Pichonat, Jean-Sebastien Galloo, Yannick Roelens, S. Bollaert, X. Wallart, A. Cappy, Javier Mateos, Tomás González, Hervé Boutry, Vincent Bayot, Lukasz Bednarz

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146012⟩

• Article dans une revue

Lead Zirconate Titanate (PZT) Films Deposited by a Hydrothermal Method

Sébastien Euphrasie, Sylvie Daviero-Minaud, Philippe Pernod

Solid State Sciences, 2003, 5 (11-12), pp.1499-1504. ⟨hal-00258427⟩

• Article dans une revue

Accurate modelling of large angle tilt (LATID) and pure vertical implantations : application to the simulation of n- and p-LDMOS backgates

Evelyne Lampin, Emmanuel Dubois, H. Xu, S. Bardy, F. Murray

The lateral and vertical extensions of the backgate of complementary laterally diffused metal oxide semiconductor (LDMOS) are simulated. The importance of channeling for a large-angle tilt implantation and a purely vertical (0°) implantation are studied with the atomistic simulator Crystal-TRIM....

IEEE Transactions on Electron Devices, 2003, 50 (5), pp.1401-1404. ⟨10.1109/TED.2003.813464⟩. ⟨hal-00146392⟩

• Article dans une revue

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Di Persio, Dominique Vignaud, Jean-Louis Codron

In this work, we investigate the influence of the growth temperature and the arsenic flux on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs with inverse step based InAlAs buffer layers. We show besides the temperature, how the composition modulations make the arsenic flux a critical...

Journal of Crystal Growth, 2003, 251, pp.822. ⟨10.1016/S0022-0248(02)02316-3⟩. ⟨hal-00018494⟩