Publicaciones

• COMM

Numerical analysis of the process induced stresses in silicon microstructures

V. Senez, T. Hoffmann, A. Armigliato, I. de Wolf

2003, pp.350-361. ⟨hal-00146444⟩

• ART

About the measurements of the d33 piezoelectric coefficient of the PZT film-Si/SiO2/Ti/Pt substrates using an optical cryostat

J. Nosek, L. Burianova, M. Sulc, Caroline Soyer, Eric Cattan, Denis Remiens

Ferroelectrics, 2003, 292, pp.103-109. ⟨hal-00146464⟩

• COMM

Sommation optique de signaux hyperfréquences

N. Breuil, C. Fourdin, P. Nicole, G. Ulliac, Jean-Pierre Vilcot, J. Chazelas

2003, pp.6C-6. ⟨hal-00146559⟩

• COMM

Modélisation d'interconnexions submicroniques VLSI en présences des milieux environnants à pertes

K. El Bouazzati, Jean-François Legier, Erick Paleczny, Christophe Seguinot, Denis Deschacht

IES, 2003, Villeneuve d'Ascq, France. pp.2D-17. ⟨hal-00146561⟩

• ART

Concept of dielectric constant for nanosized systems

Christophe Delerue, Guy Allan, Michel Lannoo

The screening properties of dielectric nanocrystals are analyzed. General arguments confirmed by detailed numerical calculations are presented. It is shown how macroscopic components of the electric field can still be defined for sizes larger than a few Fermi wavelengths and can still be obtained...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.115411-1-4. ⟨10.1103/PhysRevB.68.115411⟩. ⟨hal-00146590⟩

• ART

Optical transitions in few-electron artificial atoms strongly confined in ZnO nanocrystals

Alexander Germeau, Aarnoud L. Roest, Daniel Vanmaekelbergh, Guy Allan, Christophe Delerue, Eric A. Meulenkamp

We have studied the optical transitions in artificial atoms consisting of one to ten electrons occupying the conduction levels in ZnO nanocrystals. We analyzed near IR absorption spectra of assemblies of weakly coupled ZnO nanocrystals for a gradually increasing electron number and found four...

Physical Review Letters, 2003, 90, pp.097401/1-4. ⟨10.1103/PhysRevLett.90.097401⟩. ⟨hal-00146610⟩

• COMM

The effect of quantum confinement on the optical properties of semiconductor nanocrystals

Christophe Delerue, Guy Allan

Materials Research Society Fall Meeting, 2003, Boston, MA, United States. ⟨hal-00146644⟩

• COMM

Charge transport in self-assembled molecular rectifying diodes on silicon

Christophe Delerue, Guy Allan, Stéphane Lenfant, Dominique Vuillaume, Christophe Krzeminski

Workshop France-USA on Molecular-Scale Electronics, 2003, Paris, France. ⟨hal-00146645⟩

• ART

60-GHz high power performance In0.32 Al0.68 As-In0.33 Ga 0.67 As metamorphic HEMTs on GaAs

M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte, Didier Theron

IEEE Electron Device Letters, 2003, 24, pp.724-726. ⟨hal-00146648⟩

• ART

Low frequency drain noise comparison of AlGaN/GaN HEMTs grown on silicon, SiC and sapphire substrates

A. Curutchet, N. Malbert, N. Touboul, Christophe Gaquière, A. Minko, M. Uren

Microelectronics Reliability, 2003, 43, pp.1713-1718. ⟨hal-00146665⟩