Publicaciones

• Communication dans un congrès

Nonlinear electron transport in InGaAs/InAlaS ballistic devices

Benoit Hackens, L. Gence, Sébastien Faniel, Cédric Gustin, Hervé Boutry, Lukasz Bednarz, Isabelle Huynen, Vincent Bayot, X. Wallart, A. Cappy, Javier Mateos, Tomás González

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146041⟩

• Communication dans un congrès

IEMN : a center of the french network for basic research in Micro@Nano technology

A. Cappy

Trends in NanoTechnology, TNT 2003, 2003, Salamanca, Spain. ⟨hal-00146046⟩

• Article dans une revue

Wide and narrow-band bandpass coplanar filters in the W-frequency band

Eric Rius, Gaëtan Prigent, H. Happy, Gilles Dambrine, Samuel Boret, A. Cappy

This paper deals with the design of passive coplanar devices in the W-frequency band. As long as coplanar transmission lines are correctly dimensioned, analytical models based on quasi-TEM approximation can be used. Such models are associated with a correct definition of the reference planes at the...

IEEE Transactions on Microwave Theory and Techniques, 2003, 51 (3), pp.784-791. ⟨10.1109/TMTT.2003.808586⟩. ⟨hal-00145985⟩

• Chapitre d'ouvrage

Integrated health monitoring system based on the selective generation and sensing of Lamb waves

Jamal Assaad, Emmanuel Moulin, Sébastien Grondel, Christophe Delebarre, C. Bruneel

REMIENS D. Recent research developments in piezoelectric materials for macro/micro systems, Research Signpost, Kerala, India, pp.199-210, 2003. ⟨hal-00132000⟩

• Article dans une revue

Strain determination in silicon microstructures by combined TEM/CBED, process simulation and micro-Raman spectroscopy

V. Senez, A. Armigliato, I. de Wolf, G. Carnevale, R. Balboni, S. Frabboni, A. Benedetti

Test structures consisting of shallow trench isolation (STI) structures are fabricated using advanced silicon (Si) technology. Different process parameters and geometrical features are implemented to investigate the residual mechanical stress in the structures. A technology computer aided design...

Journal of Applied Physics, 2003, 94 (9), pp.5574-5583. ⟨10.1063/1.1611287⟩. ⟨hal-00146408⟩

• Article dans une revue

Accurate modelling of large angle tilt (LATID) and pure vertical implantations : application to the simulation of n- and p-LDMOS backgates

Evelyne Lampin, Emmanuel Dubois, H. Xu, S. Bardy, F. Murray

The lateral and vertical extensions of the backgate of complementary laterally diffused metal oxide semiconductor (LDMOS) are simulated. The importance of channeling for a large-angle tilt implantation and a purely vertical (0°) implantation are studied with the atomistic simulator Crystal-TRIM....

IEEE Transactions on Electron Devices, 2003, 50 (5), pp.1401-1404. ⟨10.1109/TED.2003.813464⟩. ⟨hal-00146392⟩

• Communication dans un congrès

HEMT technology for power applications at 94 GHz and above

F Medjdoub, M. Zaknoune, X. Wallart, F. Dessenne, Jean-Claude de Jaeger, D. Theron

12th European Workshop on Heterostructure Technology, heTech 2003, 2003, San Rafael, Spain. ⟨hal-00146695⟩

• Communication dans un congrès

Validation d'un modèle non linéaire pour MOSFET au moyen des mesures grand signal

A. Siligaris, Gilles Dambrine, D. Schreurs, Francois Danneville

2003, pp.6A-4. ⟨hal-00146013⟩

• Communication dans un congrès

Non-linear phenomenological model for RF advanced MOSFET

A. Siligaris, Gilles Dambrine, Sylvie Lepilliet, D. Schreurs, Francois Danneville

European IC-CAP User Meeting, 2003, Prague, Czech Republic. ⟨hal-00146016⟩

• Communication dans un congrès

New Schottky source/drain architectures

Emmanuel Dubois

Workshop Micro et Nanoélectronique, 2003, Crolles, France. ⟨hal-00146417⟩