Publicaciones

Affichage de 14171 à 14180 sur 16063


  • COMM

Premiers résultats de puissance à 4 GHz obtenus sur HEMTs AlGaN/GaN en technologie planar

N. Vellas, Y. Guhel, Christophe Gaquière, B. Boudart, J.C. Pesant, Z. Bougrioua, Marie Germain, Jean-Claude de Jaeger

2003, pp.4A2-1. ⟨hal-00146692⟩

  • COMM

Giant magnetostriction nanostructures for actuation of microsystems

Philippe Pernod, Vladimir Preobrazhensky

2003, pp.7. ⟨hal-00146135⟩

  • ART

Self-assembled monolayers and molecular-scale electronics

D. Vuillaume

Nano et micro technologies, 2003, 3, pp.35-57. ⟨hal-00146157⟩

  • ART

Long dephasing time and high temperature ballistic transport in an InGaAs quantum dot

Benoit Hackens, Sébastien Faniel, François Delfosse, Cédric Gustin, Hervé Boutry, Isabelle Huynen, X. Wallart, S. Bollaert, A. Cappy

We report on measurements of the magnetoconductance of an open circular InGaAs quantum dot between 1.3 and 204 K. We observe two types of magnetoconductance 5uctuations: universal conductance 5uctuations (UCFs), and “focusing” 5uctuations related to ballistic trajectories between openings. The...

Physica E: Low-dimensional Systems and Nanostructures, 2003, 17, pp.143-146. ⟨10.1016/S1386-9477(02)00713-0⟩. ⟨hal-00145986⟩

  • COMM

Injection contrôlée de charges dans des nanoparticules individuelles de silicium

H. Diesinger, Thierry Melin, D. Deresmes, D. Stievenard

Forum des microscopies à sonde locale, 2003, Montpellier, France. ⟨hal-00146612⟩

  • COMM

Optimisation des HEMTs AlGaN/GaN/Si

A. Minko, Virginie Hoel, Jean-Claude de Jaeger, Y. Cordier, F. Semond, F. Natali, J. Massies

2003, pp.1D-12. ⟨hal-00146697⟩

  • ART

Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures

S. Grenier, A. Letoublon, M.G. Proeitti, Hubert Renevier, L. Gonzalez, J.M. Garcia, C. Priester, J. Garcia

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003, 200, pp.24-33. ⟨hal-00146613⟩