Publicaciones

• Communication dans un congrès

Preliminary results on uncooled LSMO THz bolometers

Thomas Quinten, Yoann Lechaux, Victor Pierron, Chantal Gunther, Laurence Méchin, Jean-Francois Lampin, Etienne Okada, Benjamin Walter, Marc Faucher, Bruno Guillet

Journées nationales GDR NanoTeraMIR (Nanodispositifs pour THz et le MIR), GDR NanoTeraMIR, May 2023, Dunkerque (59140), France. ⟨hal-04402456⟩

• Poster de conférence

Communicating with living neurons using a next-generation bidirectional neurobiohybrid interface with optimized energy efficiency, Communiquer avec des neurones vivants avec une interface neurobiohybride bidirectionnelle de nouvelle génération avec une efficacité énergétique optimisée

Nathan Schoonjans, Virginie Hoel, Dimitri Henniquau, Vanessa Avramovic, Mohamed Lamine Fayçal Bellaredj, Pascal Mariot, Valerio Farfariello, David Delcroix, Rédha Kassi, A. Cappy, Alexis Vlandas, Christel Vanbesien

Recent breakthroughs in the field of neural prostheses have shed light on innovative approaches for restoring lost functions, such asspeech in completely paralyzed patients or the ability to walk in para/tetraplegic patients. Beyond the impressive results achieved and the evident benefit for the...

Neurofrance 2023, May 2023, Lyon, France. ⟨hal-04119733⟩

• Article dans une revue

Field and Thermal Emission Limited Charge Injection in Au–C60–Graphene van der Waals Vertical Heterostructures for Organic Electronics

Jacopo Oswald, Davide Beretta, Michael Stiefel, Roman Furrer, Sebastian Lohde, Dominique Vuillaume, Michel Calame

Among the family of 2D materials, graphene is the ideal candidate as top or interlayer electrode for hybrid van der Waals heterostructures made of organic thin films and 2D materials due to its high conductivity and mobility and its inherent ability of forming neat interfaces without diffusing in...

ACS Applied Nano Materials, 2023, ⟨10.1021/acsanm.3c01090⟩. ⟨hal-04105099⟩

• Communication dans un congrès

Machine Learning-Based Monostatic Microwave Radar for Building Material Classification

Nawal Alsaleh, Denis Pomorski, Mohamed Sebbache, Kamel Haddadi

2023 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), May 2023, Kuala Lumpur, Malaysia. pp.1-5, ⟨10.1109/I2MTC53148.2023.10176071⟩. ⟨hal-04182234⟩

• Article dans une revue

Wide-Temperature-Range Flexible Micro-Supercapacitors Using Liquid Crystal Gel Electrolyte

Min Li, Chen Jia, Yurdanur Türker, Mert Umut Özkaynak, Libo Zhao, Danyu Zhang, Yunyun Luo, Guoxi Luo, Lu Wang, Yong Xia, Zhikang Li, Nan Zhu, Ping Yang, Koray Bahadır Dönmez, Rabah Boukherroub, Zhuangde Jiang

In this work, to construct a sunlight-powered energy storage system, single wall carbon nanotubes (SWCNTs)-based symmetric micro-supercapacitors (MSCs) were fabricated by a one-step, facile spraying method. The electrodes exhibited satisfactory conductivity with a sheet resistance of 275 Ω/sq....

ACS Applied Energy Materials, 2023, 6 (10), pp.5230-5238. ⟨10.1021/acsaem.3c00144⟩. ⟨hal-04130827⟩

• Communication dans un congrès

Evaluation of the electrical properties of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy

Caroline Elias, Sebastien Chenot, Florian Bartoli, Seif El-Whibi, Jean-Claude de Jaeger, Marie Lesecq, Maxime Hugues, Yvon Cordier

In this work, the electrical properties of ScAlN/GaN high electron mobility transistor (HEMT) heterostructures grown by ammonia source molecular beam epitaxy are studied. The effect of growth temperature and ScAlN barrier thickness on 2DEG carrier density is investigated with capacitance-voltage...

Wocsdice - Exmatec 2023 Conference, May 2023, Palermo, Italy. ⟨hal-04444068⟩

• Communication dans un congrès

Comparison of Sub-Micron thick AlGaN/GaN and AlN/GaN HEMTs on Silicon for RF applications

Elodie Carneiro, Stéphanie Rennesson, Fabrice Semond, F Medjdoub

In this paper, a performance comparison between sub-micron thick AlGaN/GaN and AlN/GaN HEMT devices are reported. Various gate lengths have been employed in order to analyze the impact on DC and RF performances. Electrical characteristics of these structures for 100 nm gate length show a higher...

46th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2023), May 2023, Palerme (Italie), Italy. ⟨hal-04438164⟩

• Article dans une revue

Effects of stochastic forces on the nonlinear behaviour of a silicon nitride membrane nanoelectromechanical resonator

Sri Saran Venkatachalam, Xin Zhou

In this work, we present the effects of stochastic force generated by white noise on the nonlinear dynamics of a circular silicon nitride membrane. By tuning the membrane to the Duffing nonlinear region, detected signals switching between low- and high-amplitudes have been observed. They are...

Nanotechnology, 2023, 34 (21), pp.215202. ⟨10.1088/1361-6528/acbeb0⟩. ⟨hal-04007442⟩

• Communication dans un congrès

An aggregator-less distributed smart sensor network with selective data exchange

Mathieu Chêne, Benoit Larras, Antoine Frappé, Andreas Kaiser

Sensor Networks (SN) could be defined as networks of autonomous devices that can sense and/or act on physical or environmental conditions cooperatively. In sensor networks, data is typically sensed and sent to an aggregator that w ill process it with local AI or send it to a cloud with larger AI....

2023 IEEE International Symposium on Circuits and Systems (ISCAS), May 2023, Monterey, United States. pp.1-5, ⟨10.1109/ISCAS46773.2023.10181765⟩. ⟨hal-04189293⟩

• Communication dans un congrès

High quality drift layer thickness scaling in vertical GaN-on-Silicon PIN diodes

Youssef Hamdaoui, Idriss Abid, Sondre Michler, Katir Ziouche, F Medjdoub

We report on high drift layer quality in vertical PIN diodes grown on silicon substrate combining low Ron = 0.35 mΩ.cm², and high critical electric field of 1.82 MV/cm. The impact of the drift region thickness on the device performances shows an excellent breakdown scaling with 640 V / 820 V for 3....

46th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2023), May 2023, Palerme (Italie), Italy. ⟨hal-04438189⟩