Publicaciones

• Article dans une revue

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Di Persio, Dominique Vignaud, Jean-Louis Codron

In this work, we investigate the influence of the growth temperature and the arsenic flux on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs with inverse step based InAlAs buffer layers. We show besides the temperature, how the composition modulations make the arsenic flux a critical...

Journal of Crystal Growth, 2003, 251, pp.822. ⟨10.1016/S0022-0248(02)02316-3⟩. ⟨hal-00018494⟩

• Chapitre d'ouvrage

Integrated health monitoring system based on the selective generation and sensing of Lamb waves

Jamal Assaad, Emmanuel Moulin, Sébastien Grondel, Christophe Delebarre, C. Bruneel

REMIENS D. Recent research developments in piezoelectric materials for macro/micro systems, Research Signpost, Kerala, India, pp.199-210, 2003. ⟨hal-00132000⟩

• Communication dans un congrès

Property comparison of 2 mm thick cymbal and double dipper transducers

S.E. Danley, R.E. Newnham, D.C. Markley, R.J. Meyer, Anne-Christine Hladky

2003 US Navy Workshop on Acoustic Transduction Materials and Devices, 2003, State College, PA, United States. ⟨hal-00145967⟩

• Communication dans un congrès

Validation d'un modèle non linéaire pour MOSFET au moyen des mesures grand signal

A. Siligaris, Gilles Dambrine, D. Schreurs, Francois Danneville

2003, pp.6A-4. ⟨hal-00146013⟩

• Communication dans un congrès

Nonlinear electron transport in InGaAs/InAlaS ballistic devices

Benoit Hackens, L. Gence, Sébastien Faniel, Cédric Gustin, Hervé Boutry, Lukasz Bednarz, Isabelle Huynen, Vincent Bayot, X. Wallart, A. Cappy, Javier Mateos, Tomás González

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146041⟩

• Article dans une revue

Ballistic nanodevices for terahertz data processing : Monte Carlo simulations

J. Mateos, B.G. Vasallo, D. Pardo, T. Gonzales, Yannick Roelens, S. Bollaert, A. Cappy

Nanotechnology, 2003, 14, pp.117-122. ⟨hal-00145979⟩

• Communication dans un congrès

Double-gate HEMTs on transferred substrate

Nicolas Wichmann, I. Duszynski, T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy

2003, pp.118-121. ⟨hal-00145995⟩

• Communication dans un congrès

Fabrication of nano-ballistic devices using high resolution process

Emmanuelle Pichonat, Jean-Sebastien Galloo, Yannick Roelens, S. Bollaert, X. Wallart, A. Cappy, Javier Mateos, Tomás González, Hervé Boutry, Vincent Bayot, Lukasz Bednarz

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146012⟩

• Communication dans un congrès

Non-linear phenomenological model for RF advanced MOSFET

A. Siligaris, Gilles Dambrine, Sylvie Lepilliet, D. Schreurs, Francois Danneville

European IC-CAP User Meeting, 2003, Prague, Czech Republic. ⟨hal-00146016⟩

• Communication dans un congrès

Acoustique picoseconde et structure électronique

Arnaud Devos

2èmes Journées Ultrasons-Laser, 2003, Paris, France. ⟨hal-00145962⟩