Publicaciones

• Chapitre d'ouvrage

Theory of Si nanocrystals

Guy Allan, Christophe Delerue, Michel Lannoo

The intense luminescence observed for porous silicon [1] has raised extremely interesting problems related to the possibility of using silicon in optoelectronics. One likely explanation is quantum confinement, induced by the formation of nanocrystallites. However, the experimental data reveal a...

PAVESI L., GAPONENKO S., and DAL NEGRO L. Towards the first silicon laser, Kluwer Academic Publishers, pp.243-260, 2003, 978-1-4020-1194-8. ⟨10.1007/978-94-010-0149-6_22⟩. ⟨hal-00131749⟩

• Communication dans un congrès

Les microtechnologies et les microsystèmes : donnez du mouvement à la microélectronique

L. Buchaillot

Journée des électroniciens, 2003, Obernai, France. ⟨hal-00146458⟩

• Article dans une revue

An experimental and theoretical investigation of the GaInAs surface reactivity to phosphorus

X. Wallart, C. Priester

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.235314. ⟨hal-00018497⟩

• Article dans une revue

Influence of residual air gaps on the characteristics of circular polarization aperture-coupled millimeter wave microstrip antennas

Ronan Sauleau, Philippe Coquet

Electronics Letters, 2003, 39 (12), pp.889-891. ⟨hal-00549359⟩

• Article dans une revue

Radiation characteristics and performances of millimeter wave horn-fed gaussian beam antennas

Ronan Sauleau, Philippe Coquet, Daniel Thouroude, J.P. Daniel, T. Matsui

IEEE Transactions on Antennas and Propagation, 2003, 51 (3), pp.378-387. ⟨hal-00549357⟩

• Article dans une revue

Beam focusing using 60-GHz Fabry-Perot resonators with uniform and non-uniform metal grids

Ronan Sauleau, Philippe Coquet, Daniel Thouroude, J.P. Daniel

Electronics Letters, 2003, 39 (4), pp.341-342. ⟨hal-00549353⟩

• Communication dans un congrès

Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET structures

J. Katcki, J. Ratajczak, A. Laszcz, F. Phillipp, Emmanuel Dubois, Guilhem Larrieu, Julien Penaud, Xavier Baie

In Accumulated Low Schottky Barrier metal oxide semiconductor field effect transistors (MOSFET) on SOl structures, very thin silicide layers are used for ohmic contacts. Silicide contacts form due to metallurgical reaction of metal with semiconductor. In order to get a broad vision of the most...

Conference on Microscopy of Semiconducting Materials, Mar 2003, Cambridge, United Kingdom. pp.479-482, ⟨10.1201/9781351074636-110⟩. ⟨hal-00250182⟩

• Communication dans un congrès

Evaluation de la dégradation de béton par ondes ultrasonores haute fréquence

Bogdan Piwakowski, M. Goueygou, S. Ould-Naffa, F. Buyle-Bodin

GDR Ondes, Contrôle non destructif, 2003, Paris, France. ⟨hal-00250186⟩

• Article dans une revue

Path delay model based on alpha-stable distribution for the 60 GHz indoor channel

Nourddine Azzaoui, Laurent Clavier, Rachid Sabre

In this work we give a statistical model of the path's arrival time in the 60GHz wide band channel. This model is based on the class of stables distributions; we show its accurateness on modeling real data. We also give a theoretical justification of its compatibility.

Proceeding of Global Telecommunications Conference, 2003, Volume 3, pp.1638 - 1643 vol.3. ⟨10.1109/GLOCOM.2003.1258515⟩. ⟨hal-00255952⟩

• Communication dans un congrès

Electro-optical probe dedicated to the on-line testing of electronic systems

B. Pannetier, P. Lemaitre-Auger, S. Tedjini, El Hadj Dogheche, Denis Remiens

2003, pp.275. ⟨hal-00162741⟩