Publicaciones

• Article dans une revue

Optical transitions in few-electron artificial atoms strongly confined in ZnO nanocrystals

Alexander Germeau, Aarnoud L. Roest, Daniel Vanmaekelbergh, Guy Allan, Christophe Delerue, Eric A. Meulenkamp

We have studied the optical transitions in artificial atoms consisting of one to ten electrons occupying the conduction levels in ZnO nanocrystals. We analyzed near IR absorption spectra of assemblies of weakly coupled ZnO nanocrystals for a gradually increasing electron number and found four...

Physical Review Letters, 2003, 90, pp.097401/1-4. ⟨10.1103/PhysRevLett.90.097401⟩. ⟨hal-00146610⟩

• Communication dans un congrès

Scanning tunnelling spectroscopy of low dimensional semiconductor system

B. Grandidier

7th International Workshop on Beam Induced Assessment of Microstructures in Semiconductors, BIAMS 2003, 2003, Lille, France. ⟨hal-00146647⟩

• Communication dans un congrès

Management thermique des transistors HEMT AlGaN/GaN

Raphaël Aubry, N. Caillas, C. Dua, H. Gerard, B. Dessertene, Marie-Antoinette Di Forte-Poisson, Yvon Cordier, Didier Floriot, Jean-Claude de Jaeger, Sylvain Laurent Delage

GDR Grand Gap, 2003, Nice, France. ⟨hal-00146694⟩

• Communication dans un congrès

Optimisation des performances du transistor HEMT AlGaN/GaN sur substrat Si

A. Minko, Virginie Hoel, D. Theron, Jean-Claude de Jaeger, Y. Cordier, F. Semond, F. Natali, J. Massies

GDR Grand Gap, 2003, Nice, France. ⟨hal-00146717⟩

• Article dans une revue

Lead Zirconate Titanate (PZT) Films Deposited by a Hydrothermal Method

Sébastien Euphrasie, Sylvie Daviero-Minaud, Philippe Pernod

Solid State Sciences, 2003, 5 (11-12), pp.1499-1504. ⟨hal-00258427⟩

• Article dans une revue

Accurate modelling of large angle tilt (LATID) and pure vertical implantations : application to the simulation of n- and p-LDMOS backgates

Evelyne Lampin, Emmanuel Dubois, H. Xu, S. Bardy, F. Murray

The lateral and vertical extensions of the backgate of complementary laterally diffused metal oxide semiconductor (LDMOS) are simulated. The importance of channeling for a large-angle tilt implantation and a purely vertical (0°) implantation are studied with the atomistic simulator Crystal-TRIM....

IEEE Transactions on Electron Devices, 2003, 50 (5), pp.1401-1404. ⟨10.1109/TED.2003.813464⟩. ⟨hal-00146392⟩

• Article dans une revue

Strain determination in silicon microstructures by combined TEM/CBED, process simulation and micro-Raman spectroscopy

V. Senez, A. Armigliato, I. de Wolf, G. Carnevale, R. Balboni, S. Frabboni, A. Benedetti

Test structures consisting of shallow trench isolation (STI) structures are fabricated using advanced silicon (Si) technology. Different process parameters and geometrical features are implemented to investigate the residual mechanical stress in the structures. A technology computer aided design...

Journal of Applied Physics, 2003, 94 (9), pp.5574-5583. ⟨10.1063/1.1611287⟩. ⟨hal-00146408⟩

• Article dans une revue

Terahertz frequency generation : electronic and photonic approach

D. Lippens

La Revue de l'électricité et de l'électronique, 2003, 1, pp.25-31. ⟨hal-00162726⟩

• Communication dans un congrès

Low-frequency drain noise in AlGaN/GaN HEMTs on Si substrate

N. Malbert, N. Labat, A. Curutchet, A. Touboul, Christophe Gaquière, A. Minko

2003, pp.342-349. ⟨hal-00162738⟩

• Communication dans un congrès

Novel design for semiconductor optical filters using apodised Bragg gratings

S. Garidel, Jean-Pierre Vilcot, Didier Decoster

NEFERTITI Workshop on Recent advances in all-optical processing of microwave and RF signals & Fiber radio systems, 2003, Valence, France. ⟨hal-00146554⟩