Publicaciones

• Communication dans un congrès

Self-assembled molecular rectifying diodes on silicon : synthesis, experimental and theoretical charge transport studies

Stéphane Lenfant, Dominique Vuillaume, Christophe Krzeminski, Guy Allan, Christophe Delerue, F. Tran Van, C. Chevrot

7th European Conference on Molecular Electronics, ECME 2003, Sep 2003, Avignon, France. ⟨hal-00146179⟩

• Communication dans un congrès

Quantum calculation of leakage current in stacked gate dielectrics for nano-MOS structures

Eric Lheurette, M. Le Roy, O. Vanbésien, D. Lippens

Proceedings of the 14th Workshop on Modelling and Simulation of Electron Devices, 2003, Barcelona, Spain. ⟨hal-00146102⟩

• Communication dans un congrès

Fabrication of nano-ballistic devices using high resolution process

Emmanuelle Pichonat, Jean-Sebastien Galloo, Yannick Roelens, S. Bollaert, X. Wallart, A. Cappy, Javier Mateos, Tomás González, Hervé Boutry, Vincent Bayot, Lukasz Bednarz

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146012⟩

• Communication dans un congrès

New Schottky source/drain architectures

Emmanuel Dubois

Workshop Micro et Nanoélectronique, 2003, Crolles, France. ⟨hal-00146417⟩

• Article dans une revue

Influence on the step covering on fatigue phenomenon for polycrystalline silicon MEMS

O. Millet, Bernard Legrand, D. Collard, L. Buchaillot

Japanese Journal of Applied Physics, 2003, 41, pp.L1339-L1341. ⟨hal-00146435⟩

• Article dans une revue

Feedback of MEMS reliability study on the design stage : a step toward reliability aided design (RAD)

L. Buchaillot

Microelectronics Reliability, 2003, 43, pp.1919-1928. ⟨hal-00146437⟩

• Communication dans un congrès

Influence of growth conditions on the structural, optical and electrical quality of MBE grown InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Dipersio, Dominique Vignaud, Jean-Louis Codron

InAlAs/InGaAs metamorphic HEMTs on GaAs have demonstrated low noise figures and high output powers with obvious advantages over structures grown on InP substrates. Indeed, from a processing viewpoint, the GaAs substrate is less brittle, less expensive, available in size up to 6 inches in diameter...

International Conference on Molecular Bean Epitaxy, Sep 2002, San Francisco, CA, United States. pp.822-826, ⟨10.1109/MBE.2002.1037764⟩. ⟨hal-00146110⟩

• Autre publication scientifique

Caractérisation électro-opique de composants térahertz par échantillonnage Franz-Keldysh subpicoseconde

L. Desplanque

2003. ⟨hal-00146113⟩

• Communication dans un congrès

Property comparison of 2 mm thick cymbal and double dipper transducers

S.E. Danley, R.E. Newnham, D.C. Markley, R.J. Meyer, Anne-Christine Hladky

2003 US Navy Workshop on Acoustic Transduction Materials and Devices, 2003, State College, PA, United States. ⟨hal-00145967⟩

• Communication dans un congrès

Double-gate HEMTs on transferred substrate

Nicolas Wichmann, I. Duszynski, T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy

2003, pp.118-121. ⟨hal-00145995⟩