Publicaciones

Affichage de 1441 à 1450 sur 16094


  • Article dans une revue

Sensor-Location-Specific Joint Acquisition of Peripheral Artery Bioimpedance and Photoplethysmogram for Wearable Applications

Margus Metshein, Anar Abdullayev, Antoine Gautier, Benoit Larras, Antoine Frappe, Barry Cardiff, Paul Annus, Raul Land, Olev Märtens

Background: Cardiovascular diseases (CVDs), being the culprit for one-third of deaths globally, constitute a challenge for biomedical instrumentation development, especially for early disease detection. Pulsating arterial blood flow, providing access to cardiac-related parameters, involves the...

Sensors, 2023, Special Issue Use of Smart Wearable Sensors and AI Methods in Providing P4 Medicine, 23 (16), pp.7111. ⟨10.3390/s23167111⟩. ⟨hal-04195296⟩

  • Article dans une revue

High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

G. Di Gioia, E. Frayssinet, M. Samnouni, V. Chinni, P. Mondal, J. Treuttel, X. Wallart, M. Zegaoui, Guillaume Ducournau, Yannick Roelens, Yvon Cordier, Mohamed Zaknoune

Quasi-vertical gallium nitride (GaN) Schottky diodes on silicon carbide (SiC) substrates were fabricated for frequency multiplier applications. The epitaxial structure employed had an n− layer of 590 nm with doping 6.6 × 1016 cm−3, while the n+ layer was 950 nm thick, with doping 2 × 1019 cm−3....

Journal of Electronic Materials, 2023, 52, pp.5249-5255. ⟨10.1007/s11664-023-10499-3⟩. ⟨hal-04115301⟩

  • Article dans une revue

Sub‐Micron thick Step‐Graded AlGaN Buffer on Silicon with a High Buffer Breakdown Field

Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Kathia Harrouche, Fabrice Semond, Farid Medjdoub

We report on a sub-micron thick AlGaN/GaN high electron mobility transistor (HEMT) epilayers grown on silicon substrate with a state-of-the art vertical buffer breakdown field as high as 6 MV/cm enabling a high transistor breakdown voltage of 250 V for short gate to drain distances despite such a...

Physica Status Solidi A (applications and materials science), 2023, 220 (16), pp.2200846. ⟨10.1002/pssa.202200846⟩. ⟨hal-04042888⟩

  • Article dans une revue

Highly Si‐doped GaN regrown by MOVPE for ohmic contact applied to quaternary barrier based HEMT

Charles Pitaval, Cédric Lacam, N. Defrance, Christophe Gaquière, Nicolas Michel, Olivier Parillaud, Sylvain Delage

The quaternary barrier InAlGaN is suitable for GaN HEMT power microwave applications. High doping of semiconductor under the drain and source is a known suitable solution to achieve low ohmic contact resistance. However, InAlGaN quaternary alloys require low thermal budget to avoid indium...

Physica Status Solidi A (applications and materials science), 2023, 220 (16), pp.2200476. ⟨10.1002/pssa.202200476⟩. ⟨hal-03875911⟩

  • Communication dans un congrès

High occurence of Cryptosporidium parvum zoonotic subtypes in Diarrheal calves in France

Mohamed Mammeri, A Chevillot, Ilham Chenafi, Myriam Thomas, Christine Julien, Isabelle Vallée, Bruno Polack, Jérôme Follet, Karim Adjou

Annual Scientific Meeting of the European Veterinary Parasitology College, Ecole nationale vétérinaire d'Alfort (EnvA), Jul 2023, Maisons-Alfort, France. ⟨hal-04526288⟩