Publicaciones
Affichage de 14531 à 14540 sur 16174
Dispositifs intégrés pour la transposition de fréquences dans la bande térahertz
Thibaut David
2002. ⟨hal-00148632⟩
Wave channeling in compact multiport optical waveguide photonic crystal based devices
S. Fasquel, X. Melique, O. Vanbésien, D. Lippens
Superlattices and Microstructures, 2002, 32, pp.145-151. ⟨hal-00148644⟩
Microwave photonic devices
Didier Decoster, V. Magnin, Jean-Pierre Vilcot, Joseph Harari
1st France-Singapore Workshop on Microwave Optoelectronics Technology, 2002, Singapore, Singapore. ⟨hal-00149650⟩
High performance HBV multipliers monolithically integrated into a host quartz substrate
T. David, S. Arscott, J.M. Munier, Thibaut Decoopman, Tahsin Akalin, Patrick Mounaix, Xavier Mélique, Olivier Vanbésien, Gérard Beaudin, Didier Lippens
IEEE Tenth International Conference on Terahertz Electronics, Sep 2002, Cambridge, United Kingdom. pp.113-116, ⟨10.1109/THZ.2002.1037604⟩. ⟨hal-00148639⟩
Approche statistique en traitement du signal : application à l'imagerie radar et aux systèmes de télécommunication sans fils
Y. Delignon
2002. ⟨hal-00148626⟩
Focusing effects for electromagnetic bandgaps : the negative permittivity approach
Didier Lippens, Tahsin Akalin, Olivier Vanbésien, Jérôme Danglot, Jorge Carbonell
Actes des 7èmes Journées Caractérisation Microondes et Matériaux, JCMM 2002, 2002, Toulouse, France. ⟨hal-00148624⟩
Growth of PbTiO3/Pb[Zr,Ti]O-3 heterostructures by sputtering on Si substrate : influence of a buffer layer on the structural and electrical properties of Pb[Zr,Ti]O-3
Denis Remiens
Pandalai S.G. Crystal growth in thin solid films - Control of epitaxy, Research Signpost, Kerala, India, pp.71-86, 2002. ⟨hal-00577027⟩
Noise modeling and measurement techniques in deep submicron SOI devices
Francois Danneville, Gilles Dambrine
Balandin A. Noise and Fluctuations Control in Electronic Devices, American Scientific Publishers, pp.355-365, 2002. ⟨hal-00577023⟩
Experimental study of hot-electron inelastic scattering rate in p-type InGaAs
D. Sicault, R. Teissier, F. Pardo, J.L. Pelouard, F. Mollot
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, 12, pp.121301. ⟨hal-00018482⟩
0.12µm gate length In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate
S. Bollaert, X. Wallart, Sylvie Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar, J. Mateos
2002, pp.101-105. ⟨hal-00152950⟩