Publicaciones

Affichage de 14531 à 14540 sur 16174


  • Autre publication scientifique

Dispositifs intégrés pour la transposition de fréquences dans la bande térahertz

Thibaut David

2002. ⟨hal-00148632⟩

  • Article dans une revue

Wave channeling in compact multiport optical waveguide photonic crystal based devices

S. Fasquel, X. Melique, O. Vanbésien, D. Lippens

Superlattices and Microstructures, 2002, 32, pp.145-151. ⟨hal-00148644⟩

  • Communication dans un congrès

Microwave photonic devices

Didier Decoster, V. Magnin, Jean-Pierre Vilcot, Joseph Harari

1st France-Singapore Workshop on Microwave Optoelectronics Technology, 2002, Singapore, Singapore. ⟨hal-00149650⟩

  • Communication dans un congrès

High performance HBV multipliers monolithically integrated into a host quartz substrate

T. David, S. Arscott, J.M. Munier, Thibaut Decoopman, Tahsin Akalin, Patrick Mounaix, Xavier Mélique, Olivier Vanbésien, Gérard Beaudin, Didier Lippens

Fully integrated monolithic circuits incorporating InP-based heterostructure barrier varactor (HBV) frequency multipliers have been fabricated via epitaxial lift-off and transfer-substrate techniques onto a quartz substrate. We have obtained a maximum output power of 6 mW at 288 GHz corresponding...

IEEE Tenth International Conference on Terahertz Electronics, Sep 2002, Cambridge, United Kingdom. pp.113-116, ⟨10.1109/THZ.2002.1037604⟩. ⟨hal-00148639⟩

  • Communication dans un congrès

Focusing effects for electromagnetic bandgaps : the negative permittivity approach

Didier Lippens, Tahsin Akalin, Olivier Vanbésien, Jérôme Danglot, Jorge Carbonell

Actes des 7èmes Journées Caractérisation Microondes et Matériaux, JCMM 2002, 2002, Toulouse, France. ⟨hal-00148624⟩

  • Chapitre d'ouvrage

Growth of PbTiO3/Pb[Zr,Ti]O-3 heterostructures by sputtering on Si substrate : influence of a buffer layer on the structural and electrical properties of Pb[Zr,Ti]O-3

Denis Remiens

Pandalai S.G. Crystal growth in thin solid films - Control of epitaxy, Research Signpost, Kerala, India, pp.71-86, 2002. ⟨hal-00577027⟩

  • Chapitre d'ouvrage

Noise modeling and measurement techniques in deep submicron SOI devices

Francois Danneville, Gilles Dambrine

Balandin A. Noise and Fluctuations Control in Electronic Devices, American Scientific Publishers, pp.355-365, 2002. ⟨hal-00577023⟩

  • Article dans une revue

Experimental study of hot-electron inelastic scattering rate in p-type InGaAs

D. Sicault, R. Teissier, F. Pardo, J.L. Pelouard, F. Mollot

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, 12, pp.121301. ⟨hal-00018482⟩

  • Communication dans un congrès

0.12µm gate length In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate

S. Bollaert, X. Wallart, Sylvie Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar, J. Mateos

2002, pp.101-105. ⟨hal-00152950⟩