Publicaciones

• Article dans une revue

Low Schottky barrier source/drain for advanced MOS architecture : device design and material consideration

Emmanuel Dubois, G. Larrieu

An alternative MOSFET architecture based on the use of low barrier Schottky source/drain (S/D) contacts coupled to a thin silicon-on-insulator (SOI) film is described. Two-dimensional device simulations are used to demonstrate the advantage of low Schottky barrier S/D over conventional implanted...

Solid-State Electronics, 2002, 46 (7), pp.997-1004. ⟨10.1016/S0038-1101(02)00033-3⟩. ⟨hal-00148735⟩

• Article dans une revue

Détection d'obstacles devant les véhicules de transports guidés. Utilisation d'un radar coopératif et d'un stéréoscope optique

L. Khoudour, S. Ambellouis, C. Vieren, P. Deloof

Instrumentation, Mesure, Métrologie, 2002, 2, pp.81-116. ⟨hal-00149879⟩

• Article dans une revue

Development of a new ultrasonic technique for bone and biomaterials in vitro caracterization

Fabrice Lefebvre, Y. Deblock, Pierre Campistron, D.D. Ahite, Jean-Jacques Fabre

Journal of Biomedical Materials Research, 2002, 63, pp.441-446. ⟨hal-00149908⟩

• Communication dans un congrès

Plastic relaxation mechanisms in systems with a twist-bonded layer

C. Priester, G. Grenet

2002, pp.I13.4. ⟨hal-00149952⟩

• Communication dans un congrès

Inversion of V(z) responses for determination Cij elastic constants by using an optimization method on the singularities of the reflection coefficient

Youssef Benmehrez, Michael Lematre, G. Bourse, Wei-Jiang Xu, Mohamed Ourak

The measurement of the V(z) curve, also called acoustical material signature has been used to determine cij elastic constants. The method is based on the comparison of measured and calculated R(θ,f) reflection coefficient. The measured R(θ,f) is determined by inversion of the V(z) curve. The cij...

QUANTITATIVE NONDESTRUCTIVE EVALUATION, Jul 2001, Brunswick, United States. pp.1353-1360, ⟨10.1063/1.1472952⟩. ⟨hal-00149914⟩

• Communication dans un congrès

Inspection de billes par spectroscopie de résonance des ondes ultrasonores de surface

S. Petit, J. Gualandri, H. Carrerot, C. Bruneel

2002, pp.360-363. ⟨hal-00149922⟩

• Communication dans un congrès

Analyse physique des HEMTs à base de nitrure de gallium

M. Elkhou, Michel Rousseau, Jean-Claude de Jaeger

GDR Semiconducteurs à large bande interdite, 2002, Montpellier, France. ⟨hal-00149718⟩

• Communication dans un congrès

Spectroscopie STM de semiconducteurs et de molécules organiques

D. Stievenard

Ecole Thématique de Porquerolles, 2002, Porquerolles, France. ⟨hal-00149688⟩

• Communication dans un congrès

Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz

M. Ardouin, B. Bonte, M. Zaknoune, D. Theron, Y. Cordier, S. Bollaert, Jean-Claude de Jaeger

2002, pp.165-168. ⟨hal-00149697⟩

• Article dans une revue

High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz

Nicolas Vellas, Christophe Gaquière, Yannick Guhel, Matthieu Werquin, Frédéric Bue-Erkmen, Sylvain Laurent Delage, B. Boudart, Fabrice Semond, Jean-Claude de Jaeger

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high...

IEEE Electron Device Letters, 2002, 23 (8), pp.461-463. ⟨10.1109/LED.2002.801328⟩. ⟨hal-00149698⟩