Publicaciones

• Communication dans un congrès

MIMO propagation channel models in underground environment

J.F. Pardonche, M. Berbineau, C. Seguinot, M. Lienard

2002, pp.Session SunPmOR1, 1-6. ⟨hal-00149644⟩

• Communication dans un congrès

AlInAs/GaInAs HEMTs for power amplification at 60 GHz

M. Zaknoune, X. Wallart, F Medjdoub, M. Ardouin, B. Bonte, D. Theron, Jean-Claude de Jaeger

Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2002, 2002, Austin, TX, United States. ⟨hal-00149711⟩

• Communication dans un congrès

Monte Carlo study of the breakdown of an AlInAs/GaInAs HEMT on InP with an InP etch stop layer

F Medjdoub, D. Theron, F. Dessenne, R. Fauquembergue, Jean-Claude de Jaeger

2002, pp.57-62. ⟨hal-00149710⟩

• Communication dans un congrès

Fabrication and characterization of laterally coupled lasers

S. Mc Murtry, Jean-Pierre Vilcot, F. Mollot, Didier Decoster

2002, pp.367-374. ⟨hal-00149638⟩

• Article dans une revue

Fast electromagnetic characterization method of film-shaped materials using coplanar up to V-band

J. Hinojosa, K. Lmimouni, Gilles Dambrine

Electronics Letters, 2002, 38, pp.373-374. ⟨hal-00147838⟩

• Article dans une revue

Microwave technique for detection, location and sizing of buried objects

Latifa Achrait-Furlan, T. Lasri, Ahmed Mamouni

The detection, location, and sizing of immersed objects in a host medium are tasks of interest in many fields. One of the most suitable tools for the noninvasive measurements of buried objects is the use of microwaves. We propose in this paper a microwave method based on the knowledge of the...

Microwave and Optical Technology Letters, 2002, 32 (2), pp.145-149. ⟨10.1002/mop.10115⟩. ⟨hal-00147852⟩

• Communication dans un congrès

Monte Carlo study of electron transport in InAs HEMT structures

Olivier Bonno, Jean-Luc Thobel, François Dessenne, Hervé Boutry

Proceedings of the 13th Workshop on Physical Simulation of Semiconductor Devices, 2002, Leeds, United Kingdom. ⟨hal-00148625⟩

• Article dans une revue

Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

C. Mavroidis, J. Harris, R. Jackman, I. Harrison, B. Ansell, Z. Bougrioua, I. Moerman

We have combined plasma etching with the Hall effect and resistivity measurements between 10 and 300 K to study the depth distribution of conduction in silicon (Si)-doped GaN epitaxial layers grown on sapphire substrates by two different metalorganic chemical vapor deposition processes. Reduction...

Journal of Applied Physics, 2002, 91 (12), pp.9835. ⟨10.1063/1.1477604⟩. ⟨hal-02906594⟩

• Communication dans un congrès

Evaluation de la dégradation des ouvrages en béton par ondes ultrasonores haute fréquence

S. Ould Naffa, M. Goueygou, Bogdan Piwakowski, F. Buyle-Bodin

Actes du 6ème Congrès Français d'Acoustique, CFA 2002, 2002, Lille, France. ⟨hal-00250221⟩

• Autre publication scientifique

Stabilité des interactions silicium-hydrogène sous irradiation optique ou électronique dans les semiconducteurs à base de GaAs. Application à la fiabilité et à la nanofabrication de composants III-V

S. Silvestre

2002. ⟨hal-00162706⟩