Publicaciones

• Communication dans un congrès

High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz

N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs

2002, 4 pp. ⟨hal-00149700⟩

• Article dans une revue

High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz

Nicolas Vellas, Christophe Gaquière, Yannick Guhel, Matthieu Werquin, Frédéric Bue-Erkmen, Sylvain Laurent Delage, B. Boudart, Fabrice Semond, Jean-Claude de Jaeger

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high...

IEEE Electron Device Letters, 2002, 23 (8), pp.461-463. ⟨10.1109/LED.2002.801328⟩. ⟨hal-00149698⟩

• Communication dans un congrès

Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz

M. Ardouin, B. Bonte, M. Zaknoune, D. Theron, Y. Cordier, S. Bollaert, Jean-Claude de Jaeger

2002, pp.165-168. ⟨hal-00149697⟩

• Communication dans un congrès

Spectroscopie STM de semiconducteurs et de molécules organiques

D. Stievenard

Ecole Thématique de Porquerolles, 2002, Porquerolles, France. ⟨hal-00149688⟩

• Article dans une revue

Monte Carlo simulation of electron transport in narrow gap heterostructures

Jean-Luc Thobel, Olivier Bonno, François Dessenne, Hervé Boutry

A Monte Carlo method is proposed for the study of in-plane electron transport in narrow gap heterostructures. Special attention is paid to the consequences of the strong nonparabolicity of the conduction band. The electron states are calculated within the framework of envelope function theory,...

Journal of Applied Physics, 2002, 92 (9), pp.5286-5295. ⟨10.1063/1.1511820⟩. ⟨hal-00148646⟩

• Article dans une revue

Photo-dissociation of hydrogen passivated dopants in gallium arsenide

L. Tong, J.A. Larsson, M. Nolan, M. Murtagh, J.C. Greer, M. Barbe, F. Bailly, Jacques Chevallier, S. Silvestre, D. Loridant-Bernard, E. Constant, M. Constant

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 186, pp.234-239. ⟨hal-00149640⟩

• Communication dans un congrès

32-QAM radio transmission over multimode fibre beyond the fiber bandwidth

D. Wake, Samuel Dupont, Jean-Pierre Vilcot, A.J. Seeds

2002, 4 pp. ⟨hal-00149639⟩

• Communication dans un congrès

A large stepwise motion electrostatic actuator for a wireless mircrorobot

Philippe Basset, A. Kaiser, P. Bigotte, D. Collard, L. Buchaillot

2002, pp.606-609. ⟨hal-00148787⟩

• Communication dans un congrès

Behaviour analysis of heterojunction acoustic charge transport devices

Tadeusz Gryba, F. Ratolojanahary, V. Zhang, Jean-Etienne Lefebvre

Proceedings of the 2002 Intern. Conf. on modern directions of develop. in electr. engin. auto comp., 2002, Cracovie, Poland. ⟨hal-00147826⟩

• Article dans une revue

Electron-beam-induced reactivation of Si dopants in hydrogenated and deuterated 2D AlGaAs heterostructures. Application to the fabrication of nanostructures

L. Kurowski, S. Silvestre, D. Loridant-Bernard, E. Constant, M. Barbe, Jérome Chevalier, M. Constant

Materials Research Society Symposia Proceedings, 2002, 719, pp.275-281. ⟨hal-00278932⟩