Publicaciones

• Communication dans un congrès

Caractérisation de transistors à effet de champ à base de GaN

Christophe Gaquière, Raphaël Aubry, Yannick Guhel, A. Minko, Nicolas Vellas, Matthieu Werquin, B. Boudart, Simone Cassette, Yvon Cordier, Sylvain Laurent Delage, E. Delos, Jean-Claude de Jaeger, Damien Ducatteau, H. Gerard

3ème Ecole Thématique CNRS : Matériaux Nitrures d'Eléments III, 2002, La Plagne, France. ⟨hal-00149714⟩

• Communication dans un congrès

Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density

D. Vignaud, Jean-Francois Lampin, E. Lefebvre, M. Zaknoune, F. Mollot

2002, pp.503-506. ⟨hal-00148650⟩

• Article dans une revue

Efficient intraband optical transitions in Si nanocrystals

Guy Allan, Christophe Delerue

Efficient intraband optical transitions in the infrared range are predicted in n-type Si nanocrystals using tight-binding calculations of no-phonon and one-phonon-assisted processes taking into account each vibrational mode. New types of transitions are reported, with no equivalence in direct gap...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 66, pp.233303/1-4. ⟨10.1103/PhysRevB.66.233303⟩. ⟨hal-00149664⟩

• Communication dans un congrès

Organic thin film transistors made on high-k gate insulators

K. Lmimouni, C. Dufour, Denis Remiens, D. Vuillaume

European Materials Research Society Spring Meeting, E-MRS Spring 2002, 2002, Strasbourg, France. ⟨hal-00148715⟩

• Communication dans un congrès

Monte Carlo study of electron transport in AlSb/InAs HEMTS structures

Jean-Luc Thobel, Olivier Bonno, Hervé Boutry, François Dessenne

A Monte Carlo model of in-plane electron transport in InAs/AlSb heterostructures is presented. Special attention has been paid to the effects of nonparabolicity, which are crucial for such a narrow gap system. Electron states are obtained from a Ben Daniel-Duke equation with energy-dependent...

14th Indium Phosphide and Related Materials Conference, May 2002, Stockholm, Sweden. pp.185-188, ⟨10.1109/ICIPRM.2002.1014301⟩. ⟨hal-00148647⟩

• Article dans une revue

m-line spectroscopy for optical analysis of thick LiNbO3 layers grown on sapphire by radio-frequency multi-step sputerring

El Hadj Dogheche, X. Lansiaux, Denis Remiens

Journal of Applied Physics, 2002, 81, pp.1165-1168. ⟨hal-00149628⟩

• Article dans une revue

La sismique réflexion haute résolution, un outil pour la reconnaissance des couches superficielles

Bogdan Piwakowski, C. Leonard, I. Shahrour

Revue française de Géotechnique, 2002, 101, pp.23-33. ⟨10.1051/geotech/2002101023⟩. ⟨hal-00250179⟩

• Communication dans un congrès

Luminescence properties of InAs dots grown by molecular beam epitaxy on metamorphic InxAl1-xAs (0.33 < x < 0.52) buffer layers

D. Vignaud, Y. Cordier, P. Miska, D. Ferré

28th International Symposium on Compound Semiconductors, 2002, Japan. pp.537-542. ⟨hal-00250216⟩

• Communication dans un congrès

Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In0.53Ga0.47As heterojunction bipolar transistor

E. Lefebvre, M. Zaknoune, F. Mollot

14th Indium Phosphide and Related Materials Conference, IPRM 2002, 2002, Sweden. pp.615-618. ⟨hal-00250210⟩

• Article dans une revue

Characterization of multilayered piezoelectric ceramics for use in high power transducers

Bertrand Dubus, G. Haw, C. Granger, O. Ledez

Ultrasonics, 2002, 40, pp.903-906. ⟨hal-00147761⟩