Publicaciones

• Autre publication scientifique

Couches minces ferroélectriques pour applications opto-microélectroniques

El Hadj Dogheche

2002. ⟨hal-00149625⟩

• Article dans une revue

Ferroelectric (116) SrBi2Nb2O9 thin films epitaxially grown by pulsed laser deposition on epitaxial (110) Pt/(110) SrTiO3 electrode

Jean-René Duclere, Maryline Guilloux-Viry, A. Perrin, Eric Cattan, Caroline Soyer, Denis Remiens

Epitaxial SrBi2Nb2O9 thin films have been grown by pulsed-laser deposition on (110)Pt bottom electrode epitaxially grown on (110) SrTiO3 by dc sputtering. X-ray φ-scans and electron channeling patterns reveal the epitaxial growth of the (116) SrBi2Nb2O9/(110)Pt bilayers. The hysteresis loop,...

Applied Physics Letters, 2002, 81 (11), pp.2067-2069. ⟨10.1063/1.1504179⟩. ⟨hal-00149629⟩

• Communication dans un congrès

Unsupervised characterization of digital modulations

David Boulinguez, Christelle Garnier, Yves Delignon, Laurent Clavier

With the rising number of modulation types used in multi-user communication systems, we need to find efficient methods to discriminate them. Indeed, modulation recognition has become important in wireless communications for both civilian and military applications. Traditionally, to classify...

6th International Conference on Signal Processing, Aug 2002, Beijing, China. pp.1316-1319, ⟨10.1109/ICOSP.2002.1180034⟩. ⟨hal-00148333⟩

• Communication dans un congrès

High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz

N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs

2002, 4 pp. ⟨hal-00149700⟩

• Article dans une revue

High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz

Nicolas Vellas, Christophe Gaquière, Yannick Guhel, Matthieu Werquin, Frédéric Bue-Erkmen, Sylvain Laurent Delage, B. Boudart, Fabrice Semond, Jean-Claude de Jaeger

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high...

IEEE Electron Device Letters, 2002, 23 (8), pp.461-463. ⟨10.1109/LED.2002.801328⟩. ⟨hal-00149698⟩

• Communication dans un congrès

Influence of recess extension on double heterostructure metamorphic HEMT for power application at 60 GHz

M. Ardouin, B. Bonte, M. Zaknoune, D. Theron, Y. Cordier, S. Bollaert, Jean-Claude de Jaeger

2002, pp.165-168. ⟨hal-00149697⟩

• Communication dans un congrès

Spectroscopie STM de semiconducteurs et de molécules organiques

D. Stievenard

Ecole Thématique de Porquerolles, 2002, Porquerolles, France. ⟨hal-00149688⟩

• Article dans une revue

Monte Carlo simulation of electron transport in narrow gap heterostructures

Jean-Luc Thobel, Olivier Bonno, François Dessenne, Hervé Boutry

A Monte Carlo method is proposed for the study of in-plane electron transport in narrow gap heterostructures. Special attention is paid to the consequences of the strong nonparabolicity of the conduction band. The electron states are calculated within the framework of envelope function theory,...

Journal of Applied Physics, 2002, 92 (9), pp.5286-5295. ⟨10.1063/1.1511820⟩. ⟨hal-00148646⟩

• Article dans une revue

Photo-dissociation of hydrogen passivated dopants in gallium arsenide

L. Tong, J.A. Larsson, M. Nolan, M. Murtagh, J.C. Greer, M. Barbe, F. Bailly, Jacques Chevallier, S. Silvestre, D. Loridant-Bernard, E. Constant, M. Constant

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 186, pp.234-239. ⟨hal-00149640⟩

• Communication dans un congrès

32-QAM radio transmission over multimode fibre beyond the fiber bandwidth

D. Wake, Samuel Dupont, Jean-Pierre Vilcot, A.J. Seeds

2002, 4 pp. ⟨hal-00149639⟩