Publicaciones

• Article dans une revue

Photodissociation of hydrogen passivated dopants in gallium arsenide

L. Tong, J.A. Larsson, M. Nolan, M. Murthag, J.C. Greer, M. Barbe, F. Bailly, Jérome Chevalier, S. Sylvestre, D. Loridant-Bernard, E. Constant, M. Constant

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the SiGa–H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 186, pp.234-239. ⟨10.1016/S0168-583X(01)00949-1⟩. ⟨hal-00278930⟩

• Article dans une revue

Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

C. Mavroidis, J. Harris, R. Jackman, I. Harrison, B. Ansell, Z. Bougrioua, I. Moerman

We have combined plasma etching with the Hall effect and resistivity measurements between 10 and 300 K to study the depth distribution of conduction in silicon (Si)-doped GaN epitaxial layers grown on sapphire substrates by two different metalorganic chemical vapor deposition processes. Reduction...

Journal of Applied Physics, 2002, 91 (12), pp.9835. ⟨10.1063/1.1477604⟩. ⟨hal-02906594⟩

• Communication dans un congrès

Piezoelectric properties of sputtered PZT films: influence of structure, microstructure, film thickness, (Zr,Ti) ratio and Nb substitution

Denis Remiens, Eric Cattan, Caroline Soyer, T. Haccart

European Materials Research Society Spring Meeting, Symposium P, Advanced Materials for Microelectronics : Ferroelectrics and Low-k Dielectrics, 2002, France. pp.123-127. ⟨hal-00250393⟩

• Autre publication scientifique

Du modèle de canal de propagation à l'optimisation des systèmes de télécommunications

M. Lienard

2002. ⟨hal-00577049⟩

• Article dans une revue

Reliability of polysilicon microstructures : in situ test benches

O. Millet, D. Collard, L. Buchaillot

Microelectronics Reliability, 2002, 42, pp.1795-1800. ⟨hal-00148766⟩

• Communication dans un congrès

High-frequency high-Q micro-mechanical resonators in thick epipoly technology with post-process gap adjustment

D. Galayko, A. Kaiser, Bernard Legrand, C. Combi, D. Collard, L. Buchaillot

2002, pp.665-668. ⟨hal-00148737⟩

• Article dans une revue

Microsystem for telecommunication

D. Collard, L. Buchaillot

Seisan Kenkyu, 2002, 54, pp.135-139. ⟨hal-00148767⟩

• Communication dans un congrès

Double interaction acousto-optique dans la paratellurite

A. Sakkour, Jean-Claude Kastelik, Michel Pommeray

2002, pp.276-278. ⟨hal-00147813⟩

• Article dans une revue

fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate

S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, Sylvie Lepilliet, A. Cappy

Electronics Letters, 2002, 38, pp.389-391. ⟨hal-00147831⟩

• Communication dans un congrès

Mesures de temps de vie des électrons dans In0.53Ga0.47As dopé Be en fonction de la température de croissance et du dopage

D. Vignaud, Jean-Francois Lampin, E. Lefebvre, M. Zaknoune, F. Mollot

9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, Saint-Aygulf, France. ⟨hal-00148671⟩