Publicaciones

• Communication dans un congrès

Inversion of V(z) responses for determination Cij elastic constants by using an optimization method on the singularities of the reflection coefficient

Youssef Benmehrez, Michael Lematre, G. Bourse, Wei-Jiang Xu, Mohamed Ourak

The measurement of the V(z) curve, also called acoustical material signature has been used to determine cij elastic constants. The method is based on the comparison of measured and calculated R(θ,f) reflection coefficient. The measured R(θ,f) is determined by inversion of the V(z) curve. The cij...

QUANTITATIVE NONDESTRUCTIVE EVALUATION, Jul 2001, Brunswick, United States. pp.1353-1360, ⟨10.1063/1.1472952⟩. ⟨hal-00149914⟩

• Communication dans un congrès

Plastic relaxation mechanisms in systems with a twist-bonded layer

C. Priester, G. Grenet

2002, pp.I13.4. ⟨hal-00149952⟩

• Article dans une revue

Monte Carlo simulation of electron transport in narrow gap heterostructures

Jean-Luc Thobel, Olivier Bonno, François Dessenne, Hervé Boutry

A Monte Carlo method is proposed for the study of in-plane electron transport in narrow gap heterostructures. Special attention is paid to the consequences of the strong nonparabolicity of the conduction band. The electron states are calculated within the framework of envelope function theory,...

Journal of Applied Physics, 2002, 92 (9), pp.5286-5295. ⟨10.1063/1.1511820⟩. ⟨hal-00148646⟩

• Communication dans un congrès

On the physical interest of some numerical methods for wave phase conjugation in active media

A. Merlen, Vladimir Preobrazhensky, Philippe Pernod

2002, pp.208. ⟨hal-00148692⟩

• Communication dans un congrès

A large stepwise motion electrostatic actuator for a wireless mircrorobot

Philippe Basset, A. Kaiser, P. Bigotte, D. Collard, L. Buchaillot

2002, pp.606-609. ⟨hal-00148787⟩

• Article dans une revue

Non-quasi-static transient model of fully-depleted SOI MOSFET and its application to the analysis of charge sharing in an analog switch

Emmanuel Dubois, E. Robilliart

A fast one-dimensional (1-D) numerical model suitable for circuit analysis has been developed for fully-depleted silicon-on-insulator MOSFETs. The novel important feature of our CAD-oriented approach consists in a rigorous treatment of the nonquasistatic charge redistribution that ensures accuracy...

IEEE Electron Device Letters, 2002, 23 (1), pp.43-45. ⟨10.1109/55.974807⟩. ⟨hal-00148743⟩

• Communication dans un congrès

Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In0.53Ga0.47As heterojunction bipolar transistor

E. Lefebvre, M. Zaknoune, F. Mollot

14th Indium Phosphide and Related Materials Conference, IPRM 2002, 2002, Sweden. pp.615-618. ⟨hal-00250210⟩

• Communication dans un congrès

Réalisation technologique d’un transistor à effet de champ dans la filière GaN

B. Boudart

Ecole Thématique CNRS : Matériaux Nitrures d'Eléments III, 2002, La Plagne, France. ⟨hal-01654488⟩

• Article dans une revue

In vitro studies of human and rat osteoclast activity on hydroxyapatite, b-tricalcium phosphate, calcium carbonate

Francine Monchau, A Lefèvre, Michel Descamps, A Belquin-Myrdycz C, P Laffargue, H F Hildebrand

Investigations on the ceramic degradation caused by osteoclasts are designed to assess osteoclast Á/ceramic interactions and to determine which ceramics are more suitable for use as bone substitute. This study investigated the resorptive activity of osteoclasts on ceramics presenting different...

Biomolecular Engineering, 2002, 19 (2-6), pp.143-152. ⟨10.1016/S1389-0344(02)00023-0⟩. ⟨hal-03280920⟩

• Article dans une revue

Efficient intraband optical transitions in Si nanocrystals

Guy Allan, Christophe Delerue

Efficient intraband optical transitions in the infrared range are predicted in n-type Si nanocrystals using tight-binding calculations of no-phonon and one-phonon-assisted processes taking into account each vibrational mode. New types of transitions are reported, with no equivalence in direct gap...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 66, pp.233303/1-4. ⟨10.1103/PhysRevB.66.233303⟩. ⟨hal-00149664⟩