Publicaciones

• Autre publication scientifique

Microcapteurs de rayonnement infrarouge en technologie silicium

Mohamed Boutchich

2002. ⟨hal-00148731⟩

• Communication dans un congrès

Improvement of performance at 60 GHz of metamorphic HEMT on GaAs using double recess technology

M. Ardouin, B. Bonte, M. Zaknoune, Y. Cordier, S. Bollaert, D. Theron, Jean-Claude de Jaeger

25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chernogolovka, Russia. ⟨hal-00149713⟩

• Communication dans un congrès

Mise en évidence des effets de pièges sur le comportement électrique de composants HEMTs dans la filière nitrure de gallium

M. Werquin, Christophe Gaquière, Y. Guhel, A. Minko, Virginie Hoel, D. Ducatteau, E. Delos, M.A. Poisson, F. Semond, Jean-Claude de Jaeger

3ème Ecole Thématique CNRS : Matériaux Nitrures d'Elements III, 2002, La Plagne, France. ⟨hal-00149733⟩

• Communication dans un congrès

AlInAs/GaInAs HEMTs for power amplification at 60 GHz

M. Zaknoune, X. Wallart, F Medjdoub, M. Ardouin, B. Bonte, D. Theron, Jean-Claude de Jaeger

Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2002, 2002, Austin, TX, United States. ⟨hal-00149711⟩

• Communication dans un congrès

Monte Carlo study of the breakdown of an AlInAs/GaInAs HEMT on InP with an InP etch stop layer

F Medjdoub, D. Theron, F. Dessenne, R. Fauquembergue, Jean-Claude de Jaeger

2002, pp.57-62. ⟨hal-00149710⟩

• Communication dans un congrès

Les transistors à effet de champ pour l'amplification de puissance microonde : état de l'art et perspectives

Jean-Claude de Jaeger

5èmes Journées Microondes et Electromagnétisme, JMET 2002, 2002, Toulouse, France. ⟨hal-00149737⟩

• Communication dans un congrès

Matching of ultrasonic transducer : interest of the glue layer

Dorothée Debavelaere-Callens, C. Bruneel, Jamal Assaad

2002, pp.2408. ⟨hal-00149910⟩

• Article dans une revue

Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

C. Mavroidis, J. Harris, R. Jackman, I. Harrison, B. Ansell, Z. Bougrioua, I. Moerman

We have combined plasma etching with the Hall effect and resistivity measurements between 10 and 300 K to study the depth distribution of conduction in silicon (Si)-doped GaN epitaxial layers grown on sapphire substrates by two different metalorganic chemical vapor deposition processes. Reduction...

Journal of Applied Physics, 2002, 91 (12), pp.9835. ⟨10.1063/1.1477604⟩. ⟨hal-02906594⟩

• Article dans une revue

Microwave technique for detection, location and sizing of buried objects

Latifa Achrait-Furlan, T. Lasri, Ahmed Mamouni

The detection, location, and sizing of immersed objects in a host medium are tasks of interest in many fields. One of the most suitable tools for the noninvasive measurements of buried objects is the use of microwaves. We propose in this paper a microwave method based on the knowledge of the...

Microwave and Optical Technology Letters, 2002, 32 (2), pp.145-149. ⟨10.1002/mop.10115⟩. ⟨hal-00147852⟩

• Article dans une revue

Photodissociation of hydrogen passivated dopants in gallium arsenide

L. Tong, J.A. Larsson, M. Nolan, M. Murthag, J.C. Greer, M. Barbe, F. Bailly, Jérome Chevalier, S. Sylvestre, D. Loridant-Bernard, E. Constant, M. Constant

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the SiGa–H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 186, pp.234-239. ⟨10.1016/S0168-583X(01)00949-1⟩. ⟨hal-00278930⟩