Publicaciones

• Communication dans un congrès

Contrôle de température par radiométrie micro-onde dans le domaine de l'agroalimentaire

V. Thomy, C. Vanoverschelde, Luc Dubois, J.P. Sozanski, M. Chive

Actes du Colloque Interdisciplinaire en Instrumentation, C2I'2001, 2001, Paris, France. ⟨hal-00152043⟩

• Communication dans un congrès

Auscultation de la peau du mortier par ondes ultrasonores

S. Ould Naffa, M. Goueygou, Bogdan Piwakowski, F. Buyle-Bodin

Journées Scientifiques ENDGC2 : Méthodes d'Évaluations Non Destructives pour le Génie Civil, 2001, Bordeaux, France. ⟨hal-00152112⟩

• Communication dans un congrès

Modélisation de bruit de phase d'oscillateurs à TECs

B. Tamen, Francois Danneville, A. Cappy, J.B. Juraver, Olivier Llopis, Jacques Graffeuil

Actes des 12èmes Journées Nationales Microondes, JNM 2001, 2001, Poitiers, France. ⟨hal-00152013⟩

• Article dans une revue

Ferroelectric and piezoelectric properties of Nb doped PZT films

T. Haccart, Eric Cattan, Denis Remiens, S. Hiboux, P. Muralt

Pb(Zr,Ti)O3 (PZT) and Pb(Zr,Ti,Nb)O3 (PNZT) thin films were grown on platinized silicon substrates by r.f. magnetron sputtering followed by a post-annealing treatment. The Niobium, Nb, concentration varied from 1 to 7 at.% by increment of 1 at.%. The effects of the Nb introduction on the PZT...

Integrated Ferroelectrics, 2001, 35 (1-4), pp.239-248. ⟨10.1080/10584580108016905⟩. ⟨hal-00152475⟩

• Communication dans un congrès

A low vision aid based on a digital logic system

F. Druart, Michel Pommeray, Jean-Claude Kastelik

2001, pp.100-105. ⟨hal-00151722⟩

• Article dans une revue

Formation and characterisation of c-BN thin films deposited by microwave PECVD

A. Soltani, P. Thevenin, A. Bath

Diamond and Related Materials, 2001, 10, pp.1369-1374. ⟨hal-00152598⟩

• Communication dans un congrès

A 60 GHz high power composite channel GaInAs/InP HEMT on InP substrate with Lg=0.15 µm

Mustafa Boudrissa, Elisabet Delos, X. Wallart, Didier Theron, Jean-Claude de Jaeger

We have improved power performance by studying three different GaInAs/InP composite channel structures. Also, different gate to drain extension devices have been processed. By using composite channel devices, we benefit from the better ionization threshold energy of InP compared to GaInAs (1.69 eV...

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM, May 2001, Nara, Japan. pp.196-199, ⟨10.1109/ICIPRM.2001.929091⟩. ⟨hal-00152622⟩

• Article dans une revue

Parameter extraction and geometry effects on the electronic properties of submicron MOS transistors

H. Bakhtiar, A. Soltani, A. Hoffmann, J.P. Charles

Jurnal Fizik UTM, 2001, 8, pp.1-22. ⟨hal-00152635⟩

• Article dans une revue

Static measurements of GaN MESFETs on (111) Si substrates

Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart

Electronics Letters, 2001, 37, pp.1095-1096. ⟨hal-00152620⟩

• Communication dans un congrès

NPR comparative study of MMICs and related pHEMT at 26 GHz

Pascal Delemotte, Frédéric Bue-Erkmen, Christophe Gaquière, Yves Crosnier, Sylvie Tranchant, Bernard Carnez

31st European Microwave Association, 2001, London, United Kingdom. pp.527-530. ⟨hal-00152623⟩