Publicaciones

• Communication dans un congrès

Solid-state 8 GHz transient signal digitizer characterization

A. Ghis, P. Ouvrier-Buffet, N. Rolland, A. Benlarbi-Delai, P.A. Rolland, D. Glay, D. Jaeger

2002, pp.1673-1676. ⟨hal-00148329⟩

• Article dans une revue

Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

C. Mavroidis, J. Harris, R. Jackman, I. Harrison, B. Ansell, Z. Bougrioua, I. Moerman

We have combined plasma etching with the Hall effect and resistivity measurements between 10 and 300 K to study the depth distribution of conduction in silicon (Si)-doped GaN epitaxial layers grown on sapphire substrates by two different metalorganic chemical vapor deposition processes. Reduction...

Journal of Applied Physics, 2002, 91 (12), pp.9835. ⟨10.1063/1.1477604⟩. ⟨hal-02906594⟩

• Article dans une revue

Microwave technique for detection, location and sizing of buried objects

Latifa Achrait-Furlan, T. Lasri, Ahmed Mamouni

The detection, location, and sizing of immersed objects in a host medium are tasks of interest in many fields. One of the most suitable tools for the noninvasive measurements of buried objects is the use of microwaves. We propose in this paper a microwave method based on the knowledge of the...

Microwave and Optical Technology Letters, 2002, 32 (2), pp.145-149. ⟨10.1002/mop.10115⟩. ⟨hal-00147852⟩

• Article dans une revue

Photodissociation of hydrogen passivated dopants in gallium arsenide

L. Tong, J.A. Larsson, M. Nolan, M. Murthag, J.C. Greer, M. Barbe, F. Bailly, Jérome Chevalier, S. Sylvestre, D. Loridant-Bernard, E. Constant, M. Constant

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the SiGa–H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 186, pp.234-239. ⟨10.1016/S0168-583X(01)00949-1⟩. ⟨hal-00278930⟩

• Article dans une revue

Fabrication of a pMUT using silicon bulk micromachining and a sputtered PZT layer

W. Daniau, Karim Dogheche, S. Ballandras, Eric Cattan, Denis Remiens, W. Steichen, P. Blind

Proc. of the 2nd WorkShop on MUT, Besançon, 2002, pp. june. ⟨hal-00123195⟩

• Chapitre d'ouvrage

Chapitre 5 : Micro-actionneurs en alliage à mémoire de forme

Nicolas Chaillet, L. Buchaillot, Joël Abadie, I. Roch, Christian Lexcellent

Microactionneurs électromagnétiques, électrostatiques et électroactifs, HERMES Science Publications, pp. 179-219, 2002, Collection EGEM (Electronique, Génie Electrique, Micro-technologies). ⟨hal-00092477⟩

• Autre publication scientifique

Du modèle de canal de propagation à l'optimisation des systèmes de télécommunications

M. Lienard

2002. ⟨hal-00577049⟩

• Communication dans un congrès

High-frequency high-Q micro-mechanical resonators in thick epipoly technology with post-process gap adjustment

D. Galayko, A. Kaiser, Bernard Legrand, C. Combi, D. Collard, L. Buchaillot

2002, pp.665-668. ⟨hal-00148737⟩

• Communication dans un congrès

Luminescence de boites InAs obtenues par épitaxie par jets moléculaires sur des couches tampons métamorphiques InxAl1-xAs (0.33 = x = 0.52)

D. Vignaud, Y. Cordier, P. Miska, D. Ferre

Journée thématique Boites quantiques pour les télécommunications optiques, 2002, Rennes, France. ⟨hal-00148672⟩

• Communication dans un congrès

Mise en évidence des effets de pièges en régime dynamique grand signal (F = 4 GHz)

N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, B. Boudart, D. Ducatteau, E. Delos, M.A. Poisson, Jean-Claude de Jaeger

GDR Semiconducteurs à large bande interdite, 2002, Montpellier, France. ⟨hal-00149720⟩