Publicaciones

Affichage de 15031 à 15040 sur 16092


  • Communication dans un congrès

Etude de HEMTs sur GaN

B. Boudart, Christophe Gaquière, Y. Guhel, Virginie Hoel, N. Vellas, M. Werquin, Jean-Claude de Jaeger

GDR Matériaux Grand Gap, 2001, Grenoble, France. ⟨hal-00152669⟩

  • Article dans une revue

Investigation of the optical and electro-optical (EO) properties of hexagonal boron nitride thin fims deposited by PECVD technique

A. El Yadouni, A. Soltani, P. Thevenin, A. Bougrioua, A. Bath, J.C. Loulergue

Optical Materials, 2001, 17, pp.319-322. ⟨hal-00152600⟩

  • Autre publication scientifique

Structure électronique et transport dans une jonction moléculaire

Christophe Krzeminski

2001. ⟨hal-00152543⟩

  • Article dans une revue

Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP(001) by Gas Source Molecular Beam Epitaxy

X. Wallart, D. Deresmes, F. Mollot

Applied Physics Letters, 2001, 78, pp.2961. ⟨hal-00018480⟩

  • Article dans une revue

Fermi-edge singularities in AlxGa1-xAs quantum wells: extrinsic versus many-body scattering processes

Yann-Michel Niquet, Christophe Delerue, Michel Lannoo, Guy Allan

Physical Review Letters, 2001, 87, 24, pp.249903. ⟨hal-00018594⟩

  • Article dans une revue

On the non top-on-top vertical correlation in multistacked systems : the role of alloy spacer layers

C. Priester, G. Grenet

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, 12, pp.125312/1-5. ⟨hal-00018657⟩

  • Article dans une revue

Growth of strained GaSub 1-xIn Sub x players on GaP (001) by gas source molecular beam epitaxy similarities and differences with the growth of strained arsenides

X. Wallart, D. Deresmes, F. Mollot

Journal of Crystal Growth, 2001, 227-228, pp.255. ⟨hal-00018481⟩

  • Communication dans un congrès

Control of low-temperature-grown GaAs for ultrafast switching applications

V. Ortiz, M. Stellmacher, X. Marcadet, S. Formont, D. Adam, J. Nagle, Jean-Francois Lampin, Antigoni Alexandrou

Ultrafast Phenomena in Semiconductors V, 2001, United States. pp.202-210. ⟨hal-00250406⟩