Publicaciones
Affichage de 15031 à 15040 sur 16092
Etude de HEMTs sur GaN
B. Boudart, Christophe Gaquière, Y. Guhel, Virginie Hoel, N. Vellas, M. Werquin, Jean-Claude de Jaeger
GDR Matériaux Grand Gap, 2001, Grenoble, France. ⟨hal-00152669⟩
Investigation of the optical and electro-optical (EO) properties of hexagonal boron nitride thin fims deposited by PECVD technique
A. El Yadouni, A. Soltani, P. Thevenin, A. Bougrioua, A. Bath, J.C. Loulergue
Optical Materials, 2001, 17, pp.319-322. ⟨hal-00152600⟩
Structure électronique et transport dans une jonction moléculaire
Christophe Krzeminski
2001. ⟨hal-00152543⟩
Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP(001) by Gas Source Molecular Beam Epitaxy
X. Wallart, D. Deresmes, F. Mollot
Applied Physics Letters, 2001, 78, pp.2961. ⟨hal-00018480⟩
Fermi-edge singularities in AlxGa1-xAs quantum wells: extrinsic versus many-body scattering processes
Yann-Michel Niquet, Christophe Delerue, Michel Lannoo, Guy Allan
Physical Review Letters, 2001, 87, 24, pp.249903. ⟨hal-00018594⟩
On the non top-on-top vertical correlation in multistacked systems : the role of alloy spacer layers
C. Priester, G. Grenet
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, 12, pp.125312/1-5. ⟨hal-00018657⟩
Growth of strained GaSub 1-xIn Sub x players on GaP (001) by gas source molecular beam epitaxy similarities and differences with the growth of strained arsenides
X. Wallart, D. Deresmes, F. Mollot
Journal of Crystal Growth, 2001, 227-228, pp.255. ⟨hal-00018481⟩
Deformable magnetic mirror for adaptive optics: technological aspects
O. Cugat, Skandar Basrour, C. Divoux, P. Mounaix, G. Reyne
Sensors and Actuators A: Physical , 2001, 89, issues 1-2, pp.1-9. ⟨10.1016/S0924-4247⟩. ⟨hal-00008664⟩
Control of low-temperature-grown GaAs for ultrafast switching applications
V. Ortiz, M. Stellmacher, X. Marcadet, S. Formont, D. Adam, J. Nagle, Jean-Francois Lampin, Antigoni Alexandrou
Ultrafast Phenomena in Semiconductors V, 2001, United States. pp.202-210. ⟨hal-00250406⟩