Publicaciones
Affichage de 15121 à 15130 sur 16256
Determination of the electrical properties of 2.5nm thick silicon-based dielectric films : thermally grown SiOx
N. Pic, A. Glachant, S. Nitsche, J.Y. Hoarau, D. Goguenheim, D. Vuillaume, A. Sibai, Jean-Luc Autran
Journal of Non-Crystalline Solids, 2001, 280, pp.69-77. ⟨hal-00152161⟩
Micro-commutateurs à faible perte en gamme millimétrique (Mems)
N. Rolland-Haese, L. Buchaillot, L. Caille, P. Legry-Lefebvre, P.A. Rolland
Actes des 12èmes Journées Nationales Microondes, JNM 2001, 2001, Poitiers, France. ⟨hal-00152048⟩
On the non top-on-top vertical correlation in multistacked systems : the role of alloy spacer layers
C. Priester, G. Grenet
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, 12, pp.125312/1-5. ⟨hal-00018657⟩
Emissivity measurement in microwave radiometric mammography (MRM)
Bertrand Bocquet, Roger Ringot, J.C. van de Velde, E. Constant
PhotonIcs and Electromagnetics Research Symposium, 2001, Osaka, Japan. pp.214. ⟨hal-00152029⟩
3D self-assembling microstructures for optical MEMS devices : concept and applications
Emmanuel Quévy, Vincent Agache, Olivier Millet, Matthieu Lagouge, Patrice Bigotte, Dominique Collard, Lionel Buchaillot
Belgian Journal of Electronics & Communications HF, 2001, 2, pp.9-25. ⟨hal-00152462⟩
H-Si doping profile in GaAs by scanning tunneling microscopy
B. Grandidier, S. Silvestre, J.P. Nys, Thierry Melin, D. Bernard-Loridant, D. Stievenard, E. Constant, Jacques Chevallier
Applied Physics Letters, 2001, 79, pp.3278-3280. ⟨hal-00152490⟩
Comportement électrique à haute température de transistors HEMT's AlGaN/GaN
Y. Guhel, B. Boudart, Virginie Hoel, M. Werquin, Christophe Gaquière, Jean-Claude de Jaeger, M.A. Poisson, I. Daumiller, E. Kohn
Actes des 12èmes Journées Nationales Microondes, JNM 2001, 2001, Poitiers, France. ⟨hal-00152651⟩
Influence du dopage dans les transistors HEMT à canal composite pour amplification de puissance en ondes millimétriques
Didier Theron, Mustafa Boudrissa, Elisabet Delos, X. Wallart, Jean-Claude de Jaeger
Actes des 12èmes Journées Nationales Microondes, JNM 2001, May 2001, Poitiers, France. ⟨hal-00152653⟩
Characterisation of GaN FETs under pulsed conditions : DC and RF measurements from room temperature up to 250°C
D. Theron, Christophe Gaquière, N. Vellas, B. Boudart, Y. Guhel, Jean-Claude de Jaeger
Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2001, 2001, New Orleans, LA, United States. ⟨hal-00152673⟩