Publicaciones
Affichage de 15121 à 15130 sur 16256
Techniques micro-ondes et traitement de signal associé pour la reconstruction d'un profil de permittivité
D. Glay, T. Lasri, A. Mamouni
LEPOUTRE F., PLACKO D., SURREL Y. Instrumentation pour les mesures physiques, Hermès, pp.563-570, 2001. ⟨hal-00132316⟩
Positionnement d'une source micro-onde en présence de trajets multiples
J.C. Cousin, A. Benlarbi-Delai, R. Ringot, A. Mamouni
LEPOUTRE F., PLACKO D., SURREL Y. Instrumentation pour les mesures physiques, Hermès, pp.555-562, 2001. ⟨hal-00132322⟩
A miniature class V flextensional cymbal transducer with directional beam patterns : the double driver
J. Zhang, Anne-Christine Hladky, W.J. Hughes, R.E. Newham
Ultrasonics, 2001, 39, pp.91-95. ⟨hal-00151685⟩
Giant magnetostriction of exchange-coupled (TbFe/Fe) ML with high sensitivity after heat treatment
Henri Le Gall, Jamal Ben Youssef, Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, J. Ostorero
IEEE Transactions on Magnetics, 2001, 37, pp.2699-2701. ⟨10.1109/20.951279⟩. ⟨hal-00152095⟩
Microsystem technology : trends and possible application for textile
D. Collard, L. Buchaillot, Bernard Legrand
Conference on Modern Textile Factory, HIGHTEX 2001, 2001, Lille, France. ⟨hal-00152473⟩
Structure électronique et transport dans une jonction moléculaire
Christophe Krzeminski
2001. ⟨hal-00152543⟩
MEMS for mobile communication
E. Quevy, C. Renaux, L. Buchaillot, D. Flandre, D. Collard
Proceedings of the 13th European Microelectronics and Packaging Conference, EMPC 2001, 2001, Strasbourg, France. ⟨hal-00152220⟩
Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP(001) by Gas Source Molecular Beam Epitaxy
X. Wallart, D. Deresmes, F. Mollot
Applied Physics Letters, 2001, 78, pp.2961. ⟨hal-00018480⟩
Characterisation of GaN FETs under pulsed conditions : DC and RF measurements from room temperature up to 250°C
D. Theron, Christophe Gaquière, N. Vellas, B. Boudart, Y. Guhel, Jean-Claude de Jaeger
Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2001, 2001, New Orleans, LA, United States. ⟨hal-00152673⟩
H-Si doping profile in GaAs by scanning tunneling microscopy
B. Grandidier, S. Silvestre, J.P. Nys, Thierry Melin, D. Bernard-Loridant, D. Stievenard, E. Constant, Jacques Chevallier
Applied Physics Letters, 2001, 79, pp.3278-3280. ⟨hal-00152490⟩