Publicaciones

• Communication dans un congrès

Interferométrie micro-onde en milieu confiné

J.C. Cousin, A. Benlarbi-Delai, A. Mamouni

Actes de TELECOM 2001 & 2èmes Journées Franco-Maghrebines des Microondes et leurs Applications, JFMMA 2001, 2001, Casablanca, Maroc. ⟨hal-00152040⟩

• Communication dans un congrès

Clinical results in microwave radiometric mammography

Bertrand Bocquet, G. Tittelein, Roger Ringot

PhotonIcs and Electromagnetics Research Symposium, 2001, Osaka, Japan. pp.108. ⟨hal-00152030⟩

• Communication dans un congrès

Effet d'auto-collimation pour des sources hyperfréquences à cavité à bande interdite photonique

Jérôme Danglot, Tahsin Akalin, Olivier Vanbésien, Didier Lippens

Actes des 12èmes Journées Nationales Microondes, JNM 2001, May 2001, Poitiers, France. ⟨hal-00152051⟩

• Communication dans un congrès

An efficient modelling of the impulse response of the indoor power line communication channels in high frequency range

Patrick Corlay, François-Xavier Coudoux, Marc G. Gazalet, F. Ruolt, F. Haine

2001, pp.149-154. ⟨hal-00152914⟩

• Article dans une revue

Ultrahigh frequency DC-to-DC converters using GaAs power switches

Sami Ajram, Georges Salmer

A detailed investigation of the switching characteristics for high frequency power devices based on different technologies has been provided: BJT, MOSFET, and MESFET/HEMT structures are considered. Advantages of GaAs power switches over silicon ones have been established and illustrated. Hybrid...

IEEE Transactions on Power Electronics, 2001, 16, pp.594-602. ⟨10.1109/63.949492⟩. ⟨hal-00152026⟩

• Article dans une revue

Theoretical analysis of the density of states and phase times: Application to resonant electromagnetic modes in finite superlattices

M. Lahlaouti, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski, M. Hammouchi, E. El Boudouti, A. Nougaoui, B. Kharbouch

Physical Review B, 2001, 63 (3), pp.035312. ⟨10.1103/PhysRevB.63.035312⟩. ⟨hal-04069647⟩

• Article dans une revue

AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

D. Mistele, Zahia Bougrioua, T. Rotter, I. Moerman, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer, F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul

AlGaN/GaN based hetero field effect transistors (HFETs) were capped with different dielectrics, characterized, and tested for DC performance. As dielectrics we use SiO2 and photoelectrochemical (PEC) grown AlxGa2-xO3. Combination of this two dielectrics show best performance with respect to gate...

MRS Online Proceedings Library, 2001, 693, ⟨10.1557/PROC-693-I6.51.1⟩. ⟨hal-02906500⟩

• Communication dans un congrès

Organic thin film transistors with ferroelectric gate oxide

S. Queste, G. Velu, K. Lmimouni, D. Vuillaume, A. Chapoton, C. Legrand, Denis Remiens

7th European Conference on Molecular Electronics, 2001, Kerkrade, Netherlands. ⟨hal-00152183⟩

• Article dans une revue

Micromachined electromechanical devices for integrated wireless communication transceivers : the IST MELODICT project

A. Kaiser

MST News, 2001, 2, pp.7-8. ⟨hal-00152200⟩

• Article dans une revue

Very low-voltage digital-audio sigma delta modulator with 88 dB dynamic range using local switch bootstrapping

M. Dessouki, A. Kaiser

IEEE Journal of Solid-State Circuits, 2001, 36, pp.349-355. ⟨hal-00152201⟩