Publicaciones

• Article dans une revue

Tight binding for complex semiconductor systems

Christophe Delerue, Michel Lannoo, Guy Allan

In this review, we illustrate multiple aspects of the application of the empirical tight binding (ETB) approximation. We begin by summarizing the general principles of ETB where the Hamiltonian matrix is written in a restricted atomic basis set and in terms of a relatively limited number of...

physica status solidi (b), 2001, 227, 1, pp.115-149. ⟨10.1002/1521-3951(200109)227:13.0.CO;2-2⟩. ⟨hal-00018572⟩

• Article dans une revue

Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si(100) surface

B. Grandidier, J.P. Nys, D. Stievenard, Christophe Krzeminski, C. Delerue, P. Frere, P. Blanchard, J. Roncali

The adsorption of thienylenevinylene oligomers on the Si(1 0 0) surface has been investigated using scanning tunneling microscopy. The mode of substitution of the thiophene ring exerts a strong influence on the adsorption configurations and the images of the oligomer based on 3,4-dihexyl thiophene...

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2001, 473, 1-2, pp.1-7. ⟨10.1016/S0039-6028(00)00946-8⟩. ⟨hal-00018576⟩

• Communication dans un congrès

Liquid crystals applications to R.F. and microwave tunable components

Bertrand Splingart, Nicolas Tentillier, Fabrice Huret, Christian Legrand

The 18th International Liquid Crystal Conference - ILCC 2000, Jul 2000, Sendaï, Japan. pp.183-190, ⟨10.1080/10587250108029945⟩. ⟨hal-00158622⟩

• Autre publication scientifique

Amplification linéaire de puissance dans la gamme millimétrique : étude de la méthode par ré-injection et de la conception d'un module linéaire

C. Cordier

2001. ⟨hal-00162699⟩

• Article dans une revue

Resonant tunneling in partially disordered silicon nanostructures

Leonid Tsybeskov, G.F. Grom, Rahul G. Krishnan, Laurent Montès, P.M. Fauchet, D. Kovalev, J. Diener, Victor Timoshenko, F. Koch, John P. Mccaffrey, Jean-Marc Baribeau, G.I. Sproule, David J. Lockwood, Yann-Michel Niquet, Guy Allan, Christophe Delerue

Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current (ac) conductivity dependence on...

EPL - Europhysics Letters, 2001, 55, pp.552-558. ⟨10.1209/epl/i2001-00451-1⟩. ⟨hal-00250423⟩

• Thèse

Contribution à l’optimisation du contrôle santé intégré par ondes de Lamb : application à la surveillance de structures aéronautiques, Optimization of Lamb wave based health monitoring systems for aeronautical structure inspection

Sébastien Grondel

Ce travail est consacré à l'étude et à la mise au point d'un système de surveillance embarqué destiné au contrôle santé de structures aéronautiques. Le système choisi pour réaliser ce « contrôle santé intégré » repose, d'une part, sur l'excitation et la réception d'ondes de..., This work is devoted to the study and the development of an health monitoring system assigned to aircraft applications. The chosen health monitoring system is based first on the excitation and reception of Lamb waves along the structure and secondly on a continuous monitoring with the same...

Electronique. Université de Valenciennes et du Hainaut-Cambrésis, 2000. Français. ⟨NNT : 2000VALE0030⟩. ⟨hal-00159072⟩

• Article dans une revue

Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls

J-L Farvacque, Z. Bougrioua, I Moerman

Journal of Physics: Condensed Matter, 2000, 12 (49), pp.10213-10221. ⟨10.1088/0953-8984/12/49/321⟩. ⟨hal-02906495⟩

• Article dans une revue

Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry

A Stafford, S.J.C Irvine, Z. Bougrioua, K. Jacobs, I Moerman, E.J Thrush, L Considine

Journal of Crystal Growth, 2000, 221 (1-4), pp.142-148. ⟨10.1016/S0022-0248(00)00674-6⟩. ⟨hal-02906485⟩

• Article dans une revue

Streaming and removal forces due to second-order sound field during megasonic cleaning of silicon wafers

Jerome O. Vasseur, P. Deymier, J. Vasseur, A. Khelif, Bahram Djafari-Rouhani, L. Dobrzynski, S. Raghavan

Journal of Applied Physics, 2000, 88 (11), pp.6821-6835. ⟨10.1063/1.1323521⟩. ⟨hal-03301993⟩

• Article dans une revue

Enhancement mode metamorphic In0.33Al0.67As/In0.34Ga0.66As HEMT on GaAs substrate with high breakdown voltage

Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger

This paper presents original and experimental results provided by E-mode Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As metamorphic HEMT. The devices exhibit good dc and rf performances. The 0.4 μm gate length devices have saturation current density of 355 mA/mm at +0.6 V gate-to-source...

IEEE Electron Device Letters, 2000, 21 (11), pp.512-514. ⟨10.1109/55.877193⟩. ⟨hal-00158983⟩