Publicaciones

• Article dans une revue

Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films

J. Collet, O. Tharaud, A. Chapoton, D. Vuillaume

Applied Physics Letters, 2000, 76, pp.1941-1943. ⟨hal-00158477⟩

• Communication dans un congrès

Nouveau microcapteur de rayonnement ultraviolet à absorption différentielle

Katir Ziouche, Mohamed Boutchich, D. Loridant-Bernard, Pascale Godts, Didier Leclercq

Journées Micro et Nano Technologies, 2000, Paris, France. ⟨hal-00158491⟩

• Article dans une revue

Sub-harmonic excitation of a planar magneto-mechanical system by means of giant magnetostrictive thin films

Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, Henri Le Gall, Jamal Ben Youssef

In the present paper, we report the first results concerning the studies on non-linear actuation of cantilevers using giant magneto-strictive thin films in the vicinity of the spin reorientation transition (SRT). Bimorph centimetre beams (24×5 mm2) were designed using 160 μm thick glass, and 0.4 μm...

Journal of Magnetism and Magnetic Materials, 2000, 210 (1-3), pp.302-308. ⟨10.1016/S0304-8853(99)00658-7⟩. ⟨hal-00158465⟩

• Autre publication scientifique

Génération de maillage automatique pour la simulation tridimensionnelle de procédés de fabrication de circuits intégrés

S. Bozek

2000. ⟨hal-00158499⟩

• Autre publication scientifique

Contribution à la réalisation technologique de transistors à effet de champ dans les filières GaAs, InP et GaN pour l'amplification de puissance hyperfréquence

B. Boudart

2000. ⟨hal-00159048⟩

• Communication dans un congrès

Les alliages à mémoire de forme dans les microsystèmes

I. Roch, L. Buchaillot, O. Millet, H. Bennayyad

Actes des Troisièmes Journées du Pôle Micro-Robotique, 2000, Cachan, France. ⟨hal-00158523⟩

• Article dans une revue

Method for tight-binding parametrization : application to silicon nanostructures

Yann-Michel Niquet, Christophe Delerue, Guy Allan, Michel Lannoo

We propose a method for tight-binding parametrization, designed to give accurate results in the calculation of confined edge states in semiconductor nanostructures of any size. Indeed, this improved tight-binding description accurately reproduces the bulk effective masses as well as the overall...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 62, pp.5109-5116. ⟨10.1103/PhysRevB.62.5109⟩. ⟨hal-00158664⟩

• Article dans une revue

Quantum confinement energies in zinc-blende III-V and diamond IV semiconductors

Guy Allan, Yann-Michel Niquet, Christophe Delerue

Blueshift of the band gap due to quantum confinement is calculated in a tight-binding model for a series of nine III–V zinc-blende AB (A=Al, Ga, or In, B=As, P, or Sb) and two diamond group-IV (Si and Ge) semiconductor clusters. Analytic expressions for the highest occupied molecular orbital and...

Applied Physics Letters, 2000, 77, pp.639-641. ⟨10.1063/1.127070⟩. ⟨hal-00158665⟩

• Article dans une revue

Microscopic characterization of defects using scanning tunneling microscopy

D. Stievenard

Materials Science and Engineering: B, 2000, B71, pp.120-127. ⟨hal-00158667⟩

• Article dans une revue

Atomic-scale study of GaMnAs/GaAs

B. Grandidier, J.P. Nys, C. Delerue, D. Stievenard, Y. Higo, M. Tanaka

Applied Physics Letters, 2000, 77, pp.4001-4003. ⟨hal-00158645⟩