Publicaciones

• Communication dans un congrès

MBE growth of InAs dots on InAlAs and InGaAs buffers lattice mismatched on GaAs

Y. Cordier, P. Miska, D. Ferre

Proceedings of the 11th International Conference on Molecular Beam Epitaxy, MBE XI, 2000, Beijing, China. ⟨hal-00158218⟩

• Autre publication scientifique

Contribution à la conception et à la caractérisation de circuits intégrés analogiques micro-ondes et radiofréquences

P. Gamand

2000. ⟨hal-00158183⟩

• Communication dans un congrès

Enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34 HEMT on GaAs substrate

Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger

The Fourth International Conference of the Learning Sciences, Jun 2000, Ann Arbor, MI, United States. pp.IV-7, IV-8. ⟨hal-00159007⟩

• Article dans une revue

Strong isotope effects in the UV light-induced reactivation of dopants in hydrogenated or deuterated n-GaAs : Si

Jacques Chevallier, M. Barbe, M. Constant, D. Bernard-Loridant, S. Silvestre, E. Constant

Superlattices and Microstructures, 2000, 27, pp.447-452. ⟨hal-00158584⟩

• Article dans une revue

In situ deposition of sputtered PZT films: control of the growth temperature by the sputtered lead flux

G. Velu, Denis Remiens

Vacuum, 2000, 56, pp.199-204. ⟨hal-00158556⟩

• Article dans une revue

X-ray diffraction from perfect silicon crystals distorted by surface acoustic waves

R. Tucoulou, R. Pascal, M. Brunel, O. Mathon, D.V. Roshchupkin, I.A. Schelokov, Eric Cattan, Denis Remiens

Journal of Applied Crystallography, 2000, 33, pp.1019-1022. ⟨hal-00158555⟩

• Article dans une revue

Formation of silicon islands on a silicon on insulator substrate upon thermal annealing

Bernard Legrand, Vincent Agache, Jean-Philippe Nys, Vincent Senez, Didier Stiévenard

Starting from silicon on insulator substrates, we show that a thermal treatment (in the 600–900 °C range) induces the creation of silicon islands. To characterize the island formation as well as the initial silicon layer thickness, we use in situ Auger electron spectroscopy analysis in an ultrahigh...

Applied Physics Letters, 2000, 76, pp.3271-3273. ⟨10.1063/1.126603⟩. ⟨hal-00158537⟩

• Article dans une revue

Performance comparison of advanced receiver structures for dispersive DECT channels

M. Zaizouni, Jean-Michel Rouvaen, Atika Rivenq, F. Haine

Wireless Personal Communications, 2000, 15, pp.199-205. ⟨hal-00159055⟩

• Communication dans un congrès

InP photodetectors for millimeter-wave applications

Didier Decoster, V. Magnin, Jean-Pierre Vilcot, Joseph Harari, J.P. Gouy, M. Fendler, F. Jorge

SPIE Photonics West - Optoelectronics, Photodetectors : Materials and Devices V, 2000, San José, CA, United States. ⟨hal-00158619⟩

• Autre publication scientifique

Analyses électromagnétiques des supports de propagation pour la microélectronique. Application à l'étude des circuits intégrés micro-ondes

Fabrice Huret

2000. ⟨hal-00158615⟩