Publicaciones

• Communication dans un congrès

Investigation of refractive index and optical propagation loss in gallium nitride based waveguides

El Hadj Dogheche, P. Ruterana, G. Nouet, F. Omnes, P. Gibart

4th International Conference on Nitride Semiconductors, 2001, United States. pp.429-432. ⟨hal-00250411⟩

• Article dans une revue

Theory of electrical rectification in a molecular monolayer

Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume, Robert M Metzger

The current-voltage characteristics in Langmuir-Blodgett monolayers of γ-hexadecylquinolinium tricyanoquinodimethanide (C16H33Q−3CNQ) sandwiched between Al or Au electrodes is calculated, combining ab initio and self-consistent tight-binding techniques. The rectification current depends not only on...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, 8, pp.085405. ⟨10.1103/PhysRevB.64.085405⟩. ⟨hal-00018578⟩

• Communication dans un congrès

C16H33-Q-3CNQ, a molecular diode ?

Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume

Electron Transport on the Molecular Scale, Feb 2001, Dresden, Germany. ⟨hal-00152155⟩

• Communication dans un congrès

Etude de gravure sèche en vue de réaliser un recess de grille de HEMTs sur GaN

Y. Guhel, B. Boudart, M.A. Poisson, Jean-Claude de Jaeger

8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, 2001, Aussois, France. ⟨hal-00152672⟩

• Communication dans un congrès

Modélisation de HEMTs double puits pour l'intermodulation en bande Ka

Frédéric Bue-Erkmen, Christophe Gaquière, Pascal Delemotte, X. Hue, B. Boudart, Yves Crosnier

Actes des 12èmes Journées Nationales Microondes, JNM 2001, May 2001, Poitiers, France. ⟨hal-00152655⟩

• Article dans une revue

Static measurements of GaN MESFETs on (111) Si substrates

Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart

Electronics Letters, 2001, 37, pp.1095-1096. ⟨hal-00152620⟩

• Article dans une revue

Finite element modeling of lead magnesium niobate electrostrictive materials : dynamic analysis

J. Coutte, J.C. Debus, Bertrand Dubus, R. Bossut

Journal of the Acoustical Society of America, 2001, 109, pp.1403-1411. ⟨hal-00151686⟩

• Article dans une revue

Growth of strained Ga_1-xIn_xP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides

X. Wallart, D. Deresmes, F. Mollot

Using reflection high energy electron diffraction and atomic force microscopy, the growth of Ga1−xInxP alloys on GaP (0 0 1) with x varying from 0.2 to 1 (InP) is investigated and compared to that of arsenides on GaAs (0 0 1) or InP (0 0 1). At 520°C, the evolution of the critical thickness for 3D...

• Communication dans un congrès

Caractérisation du canal radio 60 GHz pour des liaisons haut débit intra-bâtiment

Laurent Clavier, M. Fryziel, Y. Delignon, Christophe Loyez, N. Rolland, O. Lafond, P.A. Rolland

Actes des 12èmes Journées Nationales Microondes, JNM 2001, 2001, Poitiers, France. ⟨hal-00152047⟩

• Communication dans un congrès

Acoustical and optical gallium nitride waveguides grown on Si(111) by metalorganic vapor phase epitaxy

H.P.D. Schenk, E. Feltin, M. Vaille, P. Gibart, R. Kunze, H. Schmidt, M. Weihnacht, El Hadj Dogheche

4th International Conference on Nitride Semiconductors, 2001, United States. pp.537-541. ⟨hal-00250412⟩