Publicaciones

• Article dans une revue

Method for tight-binding parametrization : application to silicon nanostructures

Yann-Michel Niquet, Christophe Delerue, Guy Allan, Michel Lannoo

We propose a method for tight-binding parametrization, designed to give accurate results in the calculation of confined edge states in semiconductor nanostructures of any size. Indeed, this improved tight-binding description accurately reproduces the bulk effective masses as well as the overall...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 62, pp.5109-5116. ⟨10.1103/PhysRevB.62.5109⟩. ⟨hal-00158664⟩

• Article dans une revue

Thermally detected optical absorption, reflectance and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy

Pierre Disseix, C. Payen, Joël Leymarie, Aime Vasson, F. Mollot

Journal of Applied Physics, 2000, 88, pp.4612-4618. ⟨hal-00158440⟩

• Article dans une revue

Sub-harmonic excitation of a planar magneto-mechanical system by means of giant magnetostrictive thin films

Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, Henri Le Gall, Jamal Ben Youssef

In the present paper, we report the first results concerning the studies on non-linear actuation of cantilevers using giant magneto-strictive thin films in the vicinity of the spin reorientation transition (SRT). Bimorph centimetre beams (24×5 mm2) were designed using 160 μm thick glass, and 0.4 μm...

Journal of Magnetism and Magnetic Materials, 2000, 210 (1-3), pp.302-308. ⟨10.1016/S0304-8853(99)00658-7⟩. ⟨hal-00158465⟩

• Autre publication scientifique

Génération de maillage automatique pour la simulation tridimensionnelle de procédés de fabrication de circuits intégrés

S. Bozek

2000. ⟨hal-00158499⟩

• Article dans une revue

The electron beam induced reactivation of Si dopants in hydrogenated GaAs : a minority carrier generation effect or an energetic excitation effect ?

S. Silvestre, D. Bernard-Loridant, E. Constant, M. Constant, Jacques Chevallier

Applied Physics Letters, 2000, 20, pp.3206-3208. ⟨hal-00158582⟩

• Article dans une revue

Raman characterization of GaN synthetised by N implantation in GaAs substrate

B. Boudart, J.C. Pesant, Jean-Claude de Jaeger, P.A. Dhamelincourt

Journal of Raman Spectroscopy, 2000, 31, pp.615-618. ⟨hal-00158978⟩

• Communication dans un congrès

GaN MESFETs for power and high temperature applications

B. Boudart, S. Trassaert, Christophe Gaquière, D. Theron, Y. Crosnier, François Huet, M.A. Poisson, I. Daumiller, E. Kohn

NearEst Miniworkshop on Advances in the Wide Bandgap Electronics and Opto-Electronics, 2000, Padova, Italy. ⟨hal-00159032⟩

• Article dans une revue

Modeling of integrated Lamb waves generation systems using a coupled finite element-normal modes expansion method

Emmanuel Moulin, Jamal Assaad, Christophe Delebarre, Sébastien Grondel, D. Balageas

Ultrasonics, 2000, 38, pp.522-526. ⟨hal-00159052⟩

• Communication dans un congrès

Systèmes moléculaires organisés, application aux nano-composants électroniques

Laurent Breuil, Dominique Vuillaume

7èmes Journées de la Matière Condensée, Aug 2000, Poitiers, France. ⟨hal-00158946⟩

• Communication dans un congrès

Alloys effects in skutterudites compounds : theoretical calculations and experimental validations for CoSb3 and Fe0.5Ni0.5Sb3

M. Lassalle, I. Lefebvre-Devos, X. Wallart, J. Olivier-Fourcade, L. Monconduit

2000, pp.B-4. ⟨hal-00158949⟩